Synthesis of α-Al2O3 thin films using reactive high power impulse magnetron sputtering

α-alumina coatings have been deposited directly onto cemented-carbide and Mo substrates at a temperature as low as 650 °C using reactive high-power impulse magnetron sputtering (HiPIMS) of Al in an Ar/O2 gas mixture. The coatings consisted of plate-like crystallites, as revealed by scanning electron microscopy. α phase growth was retained over the studied range of substrate bias voltages (from floating potential up to -100 V), with films exhibiting a slightly denser microstructure at higher bias voltages. X-ray diffraction indicated that the α-alumina grains had a preferred orientation of (0001)-planes perpendicular to the substrate surface. X-ray analysis of films deposited at 575 °C indicated the presence of γ-alumina, whereas films grown at 500 °C or lower were X-ray amorphous.Original Publication:Erik Wallin, T. I. Selinder, M. Elfwing and Ulf Helmersson, Synthesis of α-Al2O3 thin films using reactive high power impulse magnetron sputtering, 2008, Europhysics letters, (82), 36002.http://dx.doi.org/10.1209/0295-5075/82/36002Copyright: EDP Sciences.http://publications.edpsciences.org