Bias mediated tuning of the detection wavelength in asymmetrical quantum dots-in-a-well infrared photodetectors

Bias-mediated tuning of the detection wavelength within the infrared wavelength region is demonstrated for quantum dots-in-a-well and dots-on-a-well infrared photodetectors. By positioning the InAs quantum dot layer asymmetrically in an 8 nm wide In0.15Ga0.85As/GaAs quantum well, a shift in the peak detection wavelength from 8.4 to 10.3 µm was observed when reversing the polarity of the applied bias. For a dots-on-a-well structure, the peak detection wavelength was tuned from 5.4 to 8 µm with small changes in the applied bias. These tuning properties could be essential for applications such as modulators and dual-color infrared detection.Original Publication:Linda Höglund, Per-Olof Holtz, H. Pettersson, C. Asplund, Q. Wang, H. Malm, S. Almqvist, E. Petrini and J. Y. Andersson, Bias mediated tuning of the detection wavelength in asymmetrical quantum dots-in-a-well infrared photodetectors, 2008, Applied Physics Letters, (93), 203512.http://dx.doi.org/10.1063/1.3033169Copyright: American Institute of Physicshttp://www.aip.org