Time-resolved and magneto-photoluminescence (PL) studies are performed for the so-called I(6)(B) and I(7)(B) excitonic transitions, previously attributed to neutral donor bound excitons involving a hole from the B valence band (VB), D(0)X(B). It is shown that PL decays of these emissions at 2 K are faster than that of their I(6) and I(7) counterparts involving an A VB hole, which is interpreted as being due to energy relaxation of the hole assisted by acoustic phonons. From the magneto-PL measurements, values of effective Lande g factors for conduction electrons and B VB holes are determined as g(e) = 1.91, g(h)(parallel to) = 1.79, and g(h)(perpendicular to) = 0, respectively.|</p
The mechanism of the commonly observed green photoluminescence (PL) emission in ZnO is still controv...
Formation dynamics of free and neutral donor bound excitons (FX and D 0X) in a high quality ZnO sing...
Hall-effect, photoluminescence (PL), and electron paramagnetic resonance (EPR) measurements have bee...
Magneto-optical and time-resolved photoluminescence (PL) spectroscopies are employed to evaluate ele...
ZnO single crystals, epilayers, and nanostructures often exhibit a variety of narrow emission lines ...
A series of bound exciton transitions of a bulk ZnO sample has been studied by high resolution magne...
The optical properties of excitonic recombinations in bulk, n-type ZnO are investigated by photolumi...
An identification of shallow bound exciton centers in ZnO is presented based on magneto-optical meas...
An identification of shallow bound exciton centers in ZnO is presented based on magneto-optical meas...
Photoluminescence and magneto-optical measurements are performed on a line peaking at 3.354 eV (labe...
Formation dynamics of free and neutral donor bound excitons (FX and D 0X) i...
Photoluminescence and magneto-optical measurements are performed on a line peaking at 3.354 eV (labe...
Photoluminescence and magneto-optical measurements are performed on a line peaking at 3.354 eV (labe...
In this work the IIb-VI compound semiconductor ZnO is doped, via ion implantation of stable and radi...
Photoluminescence and magneto-optical measurements are performed on a line peaking at 3.354 eV (labe...
The mechanism of the commonly observed green photoluminescence (PL) emission in ZnO is still controv...
Formation dynamics of free and neutral donor bound excitons (FX and D 0X) in a high quality ZnO sing...
Hall-effect, photoluminescence (PL), and electron paramagnetic resonance (EPR) measurements have bee...
Magneto-optical and time-resolved photoluminescence (PL) spectroscopies are employed to evaluate ele...
ZnO single crystals, epilayers, and nanostructures often exhibit a variety of narrow emission lines ...
A series of bound exciton transitions of a bulk ZnO sample has been studied by high resolution magne...
The optical properties of excitonic recombinations in bulk, n-type ZnO are investigated by photolumi...
An identification of shallow bound exciton centers in ZnO is presented based on magneto-optical meas...
An identification of shallow bound exciton centers in ZnO is presented based on magneto-optical meas...
Photoluminescence and magneto-optical measurements are performed on a line peaking at 3.354 eV (labe...
Formation dynamics of free and neutral donor bound excitons (FX and D 0X) i...
Photoluminescence and magneto-optical measurements are performed on a line peaking at 3.354 eV (labe...
Photoluminescence and magneto-optical measurements are performed on a line peaking at 3.354 eV (labe...
In this work the IIb-VI compound semiconductor ZnO is doped, via ion implantation of stable and radi...
Photoluminescence and magneto-optical measurements are performed on a line peaking at 3.354 eV (labe...
The mechanism of the commonly observed green photoluminescence (PL) emission in ZnO is still controv...
Formation dynamics of free and neutral donor bound excitons (FX and D 0X) in a high quality ZnO sing...
Hall-effect, photoluminescence (PL), and electron paramagnetic resonance (EPR) measurements have bee...