We describe hardware and algorithms which enable highly selective and sensitive operation of the two gas sensor types used in the SENSIndoor project. The resistance of a metal-oxide semiconductor (MOS) type can rise above 1 G Omega in temperature cycled operation (TCO), which is measured using a logarithmic amplifier. A silicon-carbide based, gas-sensitive field-effect transistor (SiC-FET) driven with a combination of TCO and gate-bias cycled operation (GBCO) is used as second, complimentary sensor. The cyclic sensor signals exhibit distinct shape changes depending on the gas present which is captured by pattern recognition. In this study we use Linear Discriminant Analysis (LDA) for discrimination and Partial Least Squares Regression (PLSR...
Abstract-We present a low-power wide-dynamic-range readout circuit that directly interfaces a select...
International audienceThe use of the chemometric techniques to exploit the selectivity of gas sensor...
Static and dynamic responses of a silicon carbide field-effect transistor gas sensor have been inves...
We describe hardware and algorithms which enable highly selective and sensitive operation of the two...
In this paper temperature modulation and gate bias modulation of a gas sensitive field effect transi...
Gas sensitive field effect transistors based on silicon carbide, SiC-FETs, have been studied for ind...
Based on a diode coupled silicon carbide field effect transistor (FET) with platinum as catalytic ga...
Gas sensitive FETs based on SiC have been studied for the discrimination and quantification of hazar...
With the increased interest in development of cheap, simple means for indoor air quality monitoring,...
AbstractGas sensitive FETs based on SiC have been studied for the discrimination and quantification ...
Gas sensitive field effect transistors based on silicon carbide, SiC-FETs, have been applied to vari...
Selective gas leakage detection is crucial due to the adverse effects of harmful gases present in th...
Monitoring of volatile organic compounds (VOCs) is of increasing importance in many application fiel...
An approach for detecting hazardous volatile organic compounds (VOCs) in ppb and sub-ppb concentrati...
High-temperature iridium-gated field effect transistors based on silicon carbide have been used for ...
Abstract-We present a low-power wide-dynamic-range readout circuit that directly interfaces a select...
International audienceThe use of the chemometric techniques to exploit the selectivity of gas sensor...
Static and dynamic responses of a silicon carbide field-effect transistor gas sensor have been inves...
We describe hardware and algorithms which enable highly selective and sensitive operation of the two...
In this paper temperature modulation and gate bias modulation of a gas sensitive field effect transi...
Gas sensitive field effect transistors based on silicon carbide, SiC-FETs, have been studied for ind...
Based on a diode coupled silicon carbide field effect transistor (FET) with platinum as catalytic ga...
Gas sensitive FETs based on SiC have been studied for the discrimination and quantification of hazar...
With the increased interest in development of cheap, simple means for indoor air quality monitoring,...
AbstractGas sensitive FETs based on SiC have been studied for the discrimination and quantification ...
Gas sensitive field effect transistors based on silicon carbide, SiC-FETs, have been applied to vari...
Selective gas leakage detection is crucial due to the adverse effects of harmful gases present in th...
Monitoring of volatile organic compounds (VOCs) is of increasing importance in many application fiel...
An approach for detecting hazardous volatile organic compounds (VOCs) in ppb and sub-ppb concentrati...
High-temperature iridium-gated field effect transistors based on silicon carbide have been used for ...
Abstract-We present a low-power wide-dynamic-range readout circuit that directly interfaces a select...
International audienceThe use of the chemometric techniques to exploit the selectivity of gas sensor...
Static and dynamic responses of a silicon carbide field-effect transistor gas sensor have been inves...