Thermal behaviours of high-performance digital circuits in bulk CMOS and FDSOI technologies are compared on a 64-bit Kogge-Stone adder designed in 40nm CMOS node. Temperature profiles of the adder in bulk and FDSOI are extracted with thermal simulations and hotspot locations are studied. The influence of local power density on peak temperature is examined. It is shown that high power density devices have significant influence on peak temperature in FDSOI. It is found that some group of devices that perform the same function are the most prominent heat generators. A modification on the design of these devices is proposed which decreases the hotspot temperatures significantly
We study the impact of self-heating on device characteristics to compare advantages of double-gate s...
We study the impact of self-heating on device characteristics to compare advantages of double-gate s...
This paper discusses self-heating (SHE) effects in silicon-on-insulator (SOI) CMOS technology and ap...
Bulk CMOS technologies left the semiconductor market to the novel device geometries such as FDSOI an...
High density integration in advanced CMOS technology, such as STMicroelectronics’ 28 nm UTBB FD-SOI ...
High density integration in advanced CMOS technology, such as STMicroelectronics’ 28 nm UTBB FD-SOI ...
High density integration in advanced CMOS technology, such as STMicroelectronics’ 28 nm UTBB FD-SOI ...
The continuous and aggressive scaling of CMOS devices to satisfy performance demands has brought wit...
The continuous and aggressive scaling of CMOS devices to satisfy performance demands has brought wit...
The systematically growing power (heat) dissipation in CMOS transistors with each successive technol...
The systematically growing power (heat) dissipation in CMOS transistors with each successive technol...
The systematically growing power (heat) dissipation in CMOS transistors with each successive technol...
The systematically growing power (heat) dissipation in CMOS transistors with each successive technol...
The continuous and aggressive scaling of CMOS devices to satisfy performance demands has brought wit...
Thermal capacitances are required to describe the fast dynamic thermal behavior in the silicon-on-in...
We study the impact of self-heating on device characteristics to compare advantages of double-gate s...
We study the impact of self-heating on device characteristics to compare advantages of double-gate s...
This paper discusses self-heating (SHE) effects in silicon-on-insulator (SOI) CMOS technology and ap...
Bulk CMOS technologies left the semiconductor market to the novel device geometries such as FDSOI an...
High density integration in advanced CMOS technology, such as STMicroelectronics’ 28 nm UTBB FD-SOI ...
High density integration in advanced CMOS technology, such as STMicroelectronics’ 28 nm UTBB FD-SOI ...
High density integration in advanced CMOS technology, such as STMicroelectronics’ 28 nm UTBB FD-SOI ...
The continuous and aggressive scaling of CMOS devices to satisfy performance demands has brought wit...
The continuous and aggressive scaling of CMOS devices to satisfy performance demands has brought wit...
The systematically growing power (heat) dissipation in CMOS transistors with each successive technol...
The systematically growing power (heat) dissipation in CMOS transistors with each successive technol...
The systematically growing power (heat) dissipation in CMOS transistors with each successive technol...
The systematically growing power (heat) dissipation in CMOS transistors with each successive technol...
The continuous and aggressive scaling of CMOS devices to satisfy performance demands has brought wit...
Thermal capacitances are required to describe the fast dynamic thermal behavior in the silicon-on-in...
We study the impact of self-heating on device characteristics to compare advantages of double-gate s...
We study the impact of self-heating on device characteristics to compare advantages of double-gate s...
This paper discusses self-heating (SHE) effects in silicon-on-insulator (SOI) CMOS technology and ap...