In this work, a chip-level post-CMOS processing protocol for 3D integration is presented to achieve multilayer stacking. This protocol includes TSV formation on the top chip, bonding the chips on top of each other, and finally the electrical connection processes. Homogeneous CMOS chips with different thicknesses are utilized to optimize the process flow. The first electrical measurements are obtained from dummy chips composed of serially connected TSV interconnects fabricated using this process flow. As a result, an average resistance value of a single TSV is calculated as 180 mΩ for current values of up to 100 mA
As predicted by the ITRS roadmap, semiconductor industry development dominated by shrinking transist...
With sub-micron silicon processing technology reaching under 30nm, it becomes more difficult for in...
Abstract-3D integration is a fast growing field that encompasses different types of technologies. Th...
In this paper, a die-level CMOS post-processing scheme for 3D integration using the via-last approac...
In this paper, a CMOS-compatible chip-to-chip 3D integration platform will be presented. The develop...
Research and development efforts on chip and wafer-scale 3D integration for system miniaturization h...
Planar scaling of semiconductor ICs for achieving higher integration seems to be on the brink of sat...
Abstract — This paper presents a chip-level post-complementary metal oxide semiconductor (CMOS) proc...
3D stacking of die with TSV (through Silicon Via) connection as well as wafer level packaging of CMO...
This paper presents a chip-level postcomplementary metal oxide semiconductor (CMOS) processing techn...
3D integration is a fast growing field that encompasses different types of technologies. The paper a...
Today through‐silicon via (TSV) is a mature process technology option for manufacturing of 3D stacke...
3D integration using through silicon via (TSV) has many advantages, such as high packaging density, ...
tion stacks up the thin chips with TSV and microbump, while 3D Si integration stacks up thin wafers ...
In this paper, a low-cost through-multilayer TSV integration process has been developed. The feature...
As predicted by the ITRS roadmap, semiconductor industry development dominated by shrinking transist...
With sub-micron silicon processing technology reaching under 30nm, it becomes more difficult for in...
Abstract-3D integration is a fast growing field that encompasses different types of technologies. Th...
In this paper, a die-level CMOS post-processing scheme for 3D integration using the via-last approac...
In this paper, a CMOS-compatible chip-to-chip 3D integration platform will be presented. The develop...
Research and development efforts on chip and wafer-scale 3D integration for system miniaturization h...
Planar scaling of semiconductor ICs for achieving higher integration seems to be on the brink of sat...
Abstract — This paper presents a chip-level post-complementary metal oxide semiconductor (CMOS) proc...
3D stacking of die with TSV (through Silicon Via) connection as well as wafer level packaging of CMO...
This paper presents a chip-level postcomplementary metal oxide semiconductor (CMOS) processing techn...
3D integration is a fast growing field that encompasses different types of technologies. The paper a...
Today through‐silicon via (TSV) is a mature process technology option for manufacturing of 3D stacke...
3D integration using through silicon via (TSV) has many advantages, such as high packaging density, ...
tion stacks up the thin chips with TSV and microbump, while 3D Si integration stacks up thin wafers ...
In this paper, a low-cost through-multilayer TSV integration process has been developed. The feature...
As predicted by the ITRS roadmap, semiconductor industry development dominated by shrinking transist...
With sub-micron silicon processing technology reaching under 30nm, it becomes more difficult for in...
Abstract-3D integration is a fast growing field that encompasses different types of technologies. Th...