Add to ORKGWe fabricated and characterized ambipolar Silicon Nanowire (SiNW) FET transistors featuring two independent Gate-All-Around (GAA) electrodes and vertically stacked SiNW channels. One of the gate electrodes is exploited to dynamically select the polarity of the devices (n or p-type). Measurement results on silicon show Ion/Ioff > 106 and S≈64mV/dec (70mV/dec) for p-type and n-type operation in the same device. We show that XOR operation is embedded in the device characteristic, and we implement for the first time a fully functional 2-transistor XOR gate to demonstrate the potential of this technology for logic circuit design
This invention describes a novel electronic device consisting of one-or more-vertically stacked gate...
We have designed and fabricated double-gate ambipolar field-effect transistors, which exhibit p-type...
Gate-All-Around (GAA) Silicon nanowire (SiNW) is a structure with virtually “infinite” number of gat...
Vertically stacked nanowire FETs (NWFETs) with gate-all-around structure are the natural and most ad...
Abstract—Vertically stacked nanowire FETs (NWFETs) with gate-all-around structure are the natural an...
In this letter, we report on the fabrication and characterization of ambipolar silicon-nanowire (SiN...
As we advance into the era of nanotechnology, semiconductor devices are scaled down to their physica...
Silicon NanoWire (SiNW) based Field Effect Tran- sistors (FETs) are promising candidates to extend M...
Gate-all-around (GAA) silicon nanowires enable an unprecedented electrostatic control on the semicon...
Ambipolar transistors with on-line configurability to n-type and p-type polarity are desirable for f...
We extend ambipolar silicon nanowire transistors by using three independent gates and show an effici...
We describe the fabrication of vertically stacked Silicon Nanowire Field Effect Transistors (SiNWFET...
transistors (FETs) are devices whose n- or p- polarity is online configurable by adjusting the secon...
Abstract—Silicon nanowire transistors with Schottky-barrier contacts exhibit both-type and-type char...
Silicon nanowire FET (SiNWFET) with dynamic polarity control has been experimentally demonstrated an...
This invention describes a novel electronic device consisting of one-or more-vertically stacked gate...
We have designed and fabricated double-gate ambipolar field-effect transistors, which exhibit p-type...
Gate-All-Around (GAA) Silicon nanowire (SiNW) is a structure with virtually “infinite” number of gat...
Vertically stacked nanowire FETs (NWFETs) with gate-all-around structure are the natural and most ad...
Abstract—Vertically stacked nanowire FETs (NWFETs) with gate-all-around structure are the natural an...
In this letter, we report on the fabrication and characterization of ambipolar silicon-nanowire (SiN...
As we advance into the era of nanotechnology, semiconductor devices are scaled down to their physica...
Silicon NanoWire (SiNW) based Field Effect Tran- sistors (FETs) are promising candidates to extend M...
Gate-all-around (GAA) silicon nanowires enable an unprecedented electrostatic control on the semicon...
Ambipolar transistors with on-line configurability to n-type and p-type polarity are desirable for f...
We extend ambipolar silicon nanowire transistors by using three independent gates and show an effici...
We describe the fabrication of vertically stacked Silicon Nanowire Field Effect Transistors (SiNWFET...
transistors (FETs) are devices whose n- or p- polarity is online configurable by adjusting the secon...
Abstract—Silicon nanowire transistors with Schottky-barrier contacts exhibit both-type and-type char...
Silicon nanowire FET (SiNWFET) with dynamic polarity control has been experimentally demonstrated an...
This invention describes a novel electronic device consisting of one-or more-vertically stacked gate...
We have designed and fabricated double-gate ambipolar field-effect transistors, which exhibit p-type...
Gate-All-Around (GAA) Silicon nanowire (SiNW) is a structure with virtually “infinite” number of gat...