In this paper, a CMOS-compatible chip-to-chip 3D integration platform will be presented. The developed technology allows reconstituting a wafer from diced and thinned chips. Then, chip-to-chip bonding and TSV fabrication steps are accomplished in wafer-level. A parylene deposition technique developed throughout this research provides a very flat wafer surface after chip embedding, thus, photoresist spin-coating and patterning can easily be performed in wafer-level. For a full-wafer exposure by a mask aligner, 5 mu m mask-to-chip alignment accuracy is achieved in average. In the preliminary tests, two dummy chips are successfully bonded, and TSVs with parylene sidewall passivation and electroplated Cu metallization are fabricated. The daisy-...
3D integration is a key solution to the predicted performance problems of future ICs as well as it o...
3D integration is a key solution to the predicted performance increase of future electronic systems....
3D integration is a key solution to the predicted performance problems of future ICs as well as it o...
Research and development efforts on chip and wafer-scale 3D integration for system miniaturization h...
In this work, a chip-level post-CMOS processing protocol for 3D integration is presented to achieve ...
Abstract — This paper presents a chip-level post-complementary metal oxide semiconductor (CMOS) proc...
This paper presents a chip-level postcomplementary metal oxide semiconductor (CMOS) processing techn...
Today 3D interconnection approaches are considered to provide one of the most promising enabling tec...
In this paper, a die-level CMOS post-processing scheme for 3D integration using the via-last approac...
Most of the wafer level 3-D technologies are using Through-Silicon Vias (TSV). The main barriers for...
As predicted by the ITRS roadmap, semiconductor industry development dominated by shrinking transist...
As predicted by the ITRS roadmap, semiconductor industry development dominated by shrinking transist...
Three-dimensional (3D) LSIs using TSVs are indispensable to achieve high performance and low power L...
As predicted by the ITRS roadmap, semiconductor industry development dominated by shrinking transist...
An overview of wafer-level three-dimensional (3D) integration technology is provided. The basic reas...
3D integration is a key solution to the predicted performance problems of future ICs as well as it o...
3D integration is a key solution to the predicted performance increase of future electronic systems....
3D integration is a key solution to the predicted performance problems of future ICs as well as it o...
Research and development efforts on chip and wafer-scale 3D integration for system miniaturization h...
In this work, a chip-level post-CMOS processing protocol for 3D integration is presented to achieve ...
Abstract — This paper presents a chip-level post-complementary metal oxide semiconductor (CMOS) proc...
This paper presents a chip-level postcomplementary metal oxide semiconductor (CMOS) processing techn...
Today 3D interconnection approaches are considered to provide one of the most promising enabling tec...
In this paper, a die-level CMOS post-processing scheme for 3D integration using the via-last approac...
Most of the wafer level 3-D technologies are using Through-Silicon Vias (TSV). The main barriers for...
As predicted by the ITRS roadmap, semiconductor industry development dominated by shrinking transist...
As predicted by the ITRS roadmap, semiconductor industry development dominated by shrinking transist...
Three-dimensional (3D) LSIs using TSVs are indispensable to achieve high performance and low power L...
As predicted by the ITRS roadmap, semiconductor industry development dominated by shrinking transist...
An overview of wafer-level three-dimensional (3D) integration technology is provided. The basic reas...
3D integration is a key solution to the predicted performance problems of future ICs as well as it o...
3D integration is a key solution to the predicted performance increase of future electronic systems....
3D integration is a key solution to the predicted performance problems of future ICs as well as it o...