AlInN is a material which is known to be difficult to be grown among the III-nitride ternary compounds. It attracted much attention only recently and starts to be studied intensively mainly for electronic applications. The aim of this work is manifold. Various structural, electrical and optical measurements are brought together to underline the outstanding quality of AlInN epi-layers grown by metalorganic vapor phase epitaxy (MOVPE). Especially the electrons confined at the heterointerface of coherently grown AlInN on GaN buffer layers determine crucially the electronic properties. An appropriate model based on charge balance is proposed allowing the extraction of all significant electrical properties. An AlN interlayer has been introduced ...
GaN-based high electron mobility transistors with excellent high-frequency and high-power performanc...
Current-transport mechanisms were investigated in Schottky contacts on AlInN/AlN/GaN single channel ...
GaN based heterostructures have recently gained increased interest due to their applications for Hig...
III-nitrides (III-Ns) semiconductors and their alloys have shown in the last few years high potentia...
We investigate the structural and electrical properties of Al xIn 1-xN/AlN/GaN heterostructures with...
AlN/GaN/sapphire heterostructures with AlN gate film thickness of 3–35 nm are characterized using ph...
The demand of higher and higher storage density in digital data processing applicationslead in the l...
AlInN has attracted much attention only recently as a material due to its unique and superior materi...
This paper discusses the determination of key electrical parameters of AlInN/(AlN)/GaN heterostructu...
The III-nitride materials, consisting of Al, Ga, In and N, have several physical properties that mak...
Cataloged from PDF version of article.The transport properties of high mobility AlGaN/AlN/GaN and hi...
Crack-free lattice-matched Al0.85In0.15N/GaN heterostructures were grown on sapphire substrates wit...
The scattering mechanisms limiting the carrier mobility in AlInN/AlN/InGaN/GaN two-dimensional elect...
III-N materials have made a significant gain in component performance for power electronics applicat...
Gallium nitride (GaN) based technology has been heavily researched over the past two decades due to ...
GaN-based high electron mobility transistors with excellent high-frequency and high-power performanc...
Current-transport mechanisms were investigated in Schottky contacts on AlInN/AlN/GaN single channel ...
GaN based heterostructures have recently gained increased interest due to their applications for Hig...
III-nitrides (III-Ns) semiconductors and their alloys have shown in the last few years high potentia...
We investigate the structural and electrical properties of Al xIn 1-xN/AlN/GaN heterostructures with...
AlN/GaN/sapphire heterostructures with AlN gate film thickness of 3–35 nm are characterized using ph...
The demand of higher and higher storage density in digital data processing applicationslead in the l...
AlInN has attracted much attention only recently as a material due to its unique and superior materi...
This paper discusses the determination of key electrical parameters of AlInN/(AlN)/GaN heterostructu...
The III-nitride materials, consisting of Al, Ga, In and N, have several physical properties that mak...
Cataloged from PDF version of article.The transport properties of high mobility AlGaN/AlN/GaN and hi...
Crack-free lattice-matched Al0.85In0.15N/GaN heterostructures were grown on sapphire substrates wit...
The scattering mechanisms limiting the carrier mobility in AlInN/AlN/InGaN/GaN two-dimensional elect...
III-N materials have made a significant gain in component performance for power electronics applicat...
Gallium nitride (GaN) based technology has been heavily researched over the past two decades due to ...
GaN-based high electron mobility transistors with excellent high-frequency and high-power performanc...
Current-transport mechanisms were investigated in Schottky contacts on AlInN/AlN/GaN single channel ...
GaN based heterostructures have recently gained increased interest due to their applications for Hig...