Carrier transport and capture paths via barriers of different dimensionality in AlGaAs/GaAs quantum wire (QWR)/quantum dot (QD) heterostructures, grown in inverted pyramids, are studied by photoluminescence (PL) spectroscopy. Evidence for thermally activated diffusion related to potential disorder in the QWR barriers and thermionic emission of carriers from the QD into the QWR barrier is observed in temperature dependent PL spectra. Similar activation energies for the thermionic emission are derived from the continuous-wave and time-resolved PL spectroscopy
It is demonstrated that the photoluminescence spectra of single self-assembled quantum dots are very...
Temperature-dependent photoluminescence (PL) studies of an ensemble of self-assembled (In,Ga)As quan...
The electroluminescence (EL) and photocurrent (PC) spectra of p-i-n structures containing InxGa1-xAs...
We report the temperature-dependent [photoluminescence] (PL) of InAs and InxGa1 ¡ xAs quantum-dot (Q...
International audienceWe report on the lateral transfer and thermal escape of carriers in InAs quant...
A coupled GaAs/AlGaAs quantum wire (QWR)-dot sample grown by molecular beam epitaxy on a patterned (...
Carrier capture into quantum dots (QDs) grown on top of a 16 period quantum wire (QWR)-superlattice ...
We have investigated the temperature dependence of photoluminescence (PL) properties of a number of ...
The thermally induced redistribution of carriers between quantum well (QW) and quantum dot (QD) laye...
This work reports on the investigation of the thermal induced carriers’ transfer mechanism in vertic...
We report significant differences in the temperature-dependent and time-resolved photoluminescence (...
Semiconductor quantum wires (QWRs) and quantum dots (QDs) are nanoscale heterostructures, which form...
We investigate the temperature dependence of photoluminescence (PL) properties of InAs/GaAs quantum ...
Quantum wires and dots have been fabricated by local interdiffusion of undoped GaAs/AlGaAs quantum w...
In this paper, we have studied the thermal carrier process in bimodal-sized In(Ga)As/GaAs quantum do...
It is demonstrated that the photoluminescence spectra of single self-assembled quantum dots are very...
Temperature-dependent photoluminescence (PL) studies of an ensemble of self-assembled (In,Ga)As quan...
The electroluminescence (EL) and photocurrent (PC) spectra of p-i-n structures containing InxGa1-xAs...
We report the temperature-dependent [photoluminescence] (PL) of InAs and InxGa1 ¡ xAs quantum-dot (Q...
International audienceWe report on the lateral transfer and thermal escape of carriers in InAs quant...
A coupled GaAs/AlGaAs quantum wire (QWR)-dot sample grown by molecular beam epitaxy on a patterned (...
Carrier capture into quantum dots (QDs) grown on top of a 16 period quantum wire (QWR)-superlattice ...
We have investigated the temperature dependence of photoluminescence (PL) properties of a number of ...
The thermally induced redistribution of carriers between quantum well (QW) and quantum dot (QD) laye...
This work reports on the investigation of the thermal induced carriers’ transfer mechanism in vertic...
We report significant differences in the temperature-dependent and time-resolved photoluminescence (...
Semiconductor quantum wires (QWRs) and quantum dots (QDs) are nanoscale heterostructures, which form...
We investigate the temperature dependence of photoluminescence (PL) properties of InAs/GaAs quantum ...
Quantum wires and dots have been fabricated by local interdiffusion of undoped GaAs/AlGaAs quantum w...
In this paper, we have studied the thermal carrier process in bimodal-sized In(Ga)As/GaAs quantum do...
It is demonstrated that the photoluminescence spectra of single self-assembled quantum dots are very...
Temperature-dependent photoluminescence (PL) studies of an ensemble of self-assembled (In,Ga)As quan...
The electroluminescence (EL) and photocurrent (PC) spectra of p-i-n structures containing InxGa1-xAs...