The versatility and usefulness of the newly developed reflectance modulation technique for laser mirror characterization will be demonstrated by means of typical examples of application on (110) facets of 10-mu-m wide ridge waveguide AlGaAs/GaAs quantum well lasers: (1) Typical, maximum temperature increases DELTA-T derived from the reflectance changes DELTA-R/R are congruent-to 1 K per 1 mW optical diode power for uncoated mirrors and are congruent-to 10x lower for lambda/2-Al2O3 coated ones. DELTA-T is sensitive to the facet surface treatment prior to coating. (2) Temperature maps show a very localized hot spot within the near-field region and are in accordance with our two-dimensional heat flow calculations. (3) Degradation processes hav...
Abstract-The authors describe a straightforward experimental technique for measuring the facet tempe...
[[abstract]]The authors investigate the influence of facet reflectivity on the threshold current, li...
The facet heating of a single-quantum well InGaAs/AlGaAs broad-area high-power laser-diodes emitting...
In the present work single-quantum-well laser diodes operating at 0.98 mm are investigated by photot...
[[abstract]]In this paper, we report the fabrication and characteristics of 1.3-mu m strained multip...
The mirror temperature response of a diode laser to injection current is studied through the photode...
The mirror temperature response of a diode laser to injection current is studied through the photode...
The mirror temperature response of a diode laser to injection current is studied through the photode...
A study of facet degradation of InGaAs quantum well lasers is reported. We tune up a Raman and photo...
438-440The cleaved facets of semiconductor diode lasers act like mirror. Mirror coatings are applie...
Facet overheating is considered a potential source for device degradation of diode lasers. We test t...
The authors describe a straightforward experimental technique for measuring the facet temperature of...
The high-energy emission from high power lasers was measured and the facet temperature was extracted...
Temperature is a key factor in determining the output stability of lasers. The performance of lasers...
We investigate the results of different spectroscopic characterisation techniques on different semic...
Abstract-The authors describe a straightforward experimental technique for measuring the facet tempe...
[[abstract]]The authors investigate the influence of facet reflectivity on the threshold current, li...
The facet heating of a single-quantum well InGaAs/AlGaAs broad-area high-power laser-diodes emitting...
In the present work single-quantum-well laser diodes operating at 0.98 mm are investigated by photot...
[[abstract]]In this paper, we report the fabrication and characteristics of 1.3-mu m strained multip...
The mirror temperature response of a diode laser to injection current is studied through the photode...
The mirror temperature response of a diode laser to injection current is studied through the photode...
The mirror temperature response of a diode laser to injection current is studied through the photode...
A study of facet degradation of InGaAs quantum well lasers is reported. We tune up a Raman and photo...
438-440The cleaved facets of semiconductor diode lasers act like mirror. Mirror coatings are applie...
Facet overheating is considered a potential source for device degradation of diode lasers. We test t...
The authors describe a straightforward experimental technique for measuring the facet temperature of...
The high-energy emission from high power lasers was measured and the facet temperature was extracted...
Temperature is a key factor in determining the output stability of lasers. The performance of lasers...
We investigate the results of different spectroscopic characterisation techniques on different semic...
Abstract-The authors describe a straightforward experimental technique for measuring the facet tempe...
[[abstract]]The authors investigate the influence of facet reflectivity on the threshold current, li...
The facet heating of a single-quantum well InGaAs/AlGaAs broad-area high-power laser-diodes emitting...