Germanium nanowires were synthesized using thermal chemical vapor deposition (CVD) and indium as a catalyst. The process parameter space for successful growth was studied. By optimizing the growth temperature and gas pressure, high aspect ratio germanium nanowires have been obtained. Scanning electron microscopy investigations indicate that the final diameter of the nanowires is strongly influenced by the growth temperature and the germane partial pressure. High resolution transmission electron microscopy reveals that nanowires grow either as high quality single crystalline, or with a high quality single-crystalline core and a concentric amorphous shell. The occurrence of these two morphologies is found to only depend on the wire diameter. ...
The vapor-liquid-solid growth process for synthesis of group-IV semiconducting nanowires using silan...
One-dimensional semiconductor nanostructures have been studied in great depth over the past number o...
This paper reports the growth of the germanium nanowires (Ge NWs) with a single-step temperature met...
The structure of indium-catalyzed germanium nanowires is investigated by atomic force microscopy, sc...
Indium was used as a catalyst for the synthesis of silicon nanowires in a plasma enhanced chemical v...
We report the self-seeded growth of highly crystalline Ge nanowires, with a mean diameter as small a...
Vapour-liquid-solid (VLS) techniques are popular routes for the scalable synthesis of semiconductor ...
This work deals with the growth and characterization of silicon (Si) and germanium (Ge) nanowires. T...
Germanium nanowires were grown on Au coated Si substrates at 380 degrees C in a high vacuum (5 x 10(...
International audienceSilicon and germanium nanowires are synthesized by the VLS (VaporLiquid Solid)...
We report on the self-assembly of core–shell Ge/In–Te nanowires (NWs) on single crystal Si substrate...
textA supercritical fluid synthesis method was developed for the preparation of single crystal germ...
We report on the self-assembly of core-shell Ge/In-Te nanowires (NWs) on single crystal Si substrate...
The impacts of surface conditions on the growth of Ge nanowires on a Si (100) substrate are discusse...
Directing the morphological evolution of one-dimensional materials in order to tune their properties...
The vapor-liquid-solid growth process for synthesis of group-IV semiconducting nanowires using silan...
One-dimensional semiconductor nanostructures have been studied in great depth over the past number o...
This paper reports the growth of the germanium nanowires (Ge NWs) with a single-step temperature met...
The structure of indium-catalyzed germanium nanowires is investigated by atomic force microscopy, sc...
Indium was used as a catalyst for the synthesis of silicon nanowires in a plasma enhanced chemical v...
We report the self-seeded growth of highly crystalline Ge nanowires, with a mean diameter as small a...
Vapour-liquid-solid (VLS) techniques are popular routes for the scalable synthesis of semiconductor ...
This work deals with the growth and characterization of silicon (Si) and germanium (Ge) nanowires. T...
Germanium nanowires were grown on Au coated Si substrates at 380 degrees C in a high vacuum (5 x 10(...
International audienceSilicon and germanium nanowires are synthesized by the VLS (VaporLiquid Solid)...
We report on the self-assembly of core–shell Ge/In–Te nanowires (NWs) on single crystal Si substrate...
textA supercritical fluid synthesis method was developed for the preparation of single crystal germ...
We report on the self-assembly of core-shell Ge/In-Te nanowires (NWs) on single crystal Si substrate...
The impacts of surface conditions on the growth of Ge nanowires on a Si (100) substrate are discusse...
Directing the morphological evolution of one-dimensional materials in order to tune their properties...
The vapor-liquid-solid growth process for synthesis of group-IV semiconducting nanowires using silan...
One-dimensional semiconductor nanostructures have been studied in great depth over the past number o...
This paper reports the growth of the germanium nanowires (Ge NWs) with a single-step temperature met...