Low temperature irradiation experiments show a remarkable contrast between Si and Ge. suggesting that the behavior of self-interstitials and vacancies is very different in the two materials. The present paper reviews theoretical and experimental investigations of the defects in an attempt to understand these differences. (C) 2008 Elsevier B.V. All rights reserved
The properties of multi-vacancy and multi-interstitial defects that possess luminescent bands around...
International audienceWe show that the solid-phase epitaxial regrowth of amorphous layers created by...
The properties of multi-vacancy and multi-interstitial defects that possess luminescent bands around...
Presented in this thesis are the results of computational investigations into radiation defects in s...
The formation energies of intrinsic point defects in Si and Ge were calculated by means of Density F...
Ab initio methods are employed to examine the structure of the Ge self-interstitial and its aggregat...
B diffusion measurements are used to probe the basic nature of self-interstitial point defects in Ge...
The vacancies and self-interstitials in silicon are involved, in a straightforward way, in various p...
Model of modification of basic levels of the known radiation defects in silicon and a germanium is o...
B diffusion measurements are used to probe the basic nature of self-interstitial point defects in Ge...
Material and lattice defect properties of silicon and germanium relevant for device processing are d...
The paper is concerned with monocrystals of silicon-germanium solid solutions. The aim of the paper ...
New findings on the self-interstitial migration in p-type silicon are presented. They are based on e...
The microscopic model of the Si (001) crystal surface was investigated by first principles calculati...
The microscopic model of the Si (001) crystal surface was investigated by first principles calculati...
The properties of multi-vacancy and multi-interstitial defects that possess luminescent bands around...
International audienceWe show that the solid-phase epitaxial regrowth of amorphous layers created by...
The properties of multi-vacancy and multi-interstitial defects that possess luminescent bands around...
Presented in this thesis are the results of computational investigations into radiation defects in s...
The formation energies of intrinsic point defects in Si and Ge were calculated by means of Density F...
Ab initio methods are employed to examine the structure of the Ge self-interstitial and its aggregat...
B diffusion measurements are used to probe the basic nature of self-interstitial point defects in Ge...
The vacancies and self-interstitials in silicon are involved, in a straightforward way, in various p...
Model of modification of basic levels of the known radiation defects in silicon and a germanium is o...
B diffusion measurements are used to probe the basic nature of self-interstitial point defects in Ge...
Material and lattice defect properties of silicon and germanium relevant for device processing are d...
The paper is concerned with monocrystals of silicon-germanium solid solutions. The aim of the paper ...
New findings on the self-interstitial migration in p-type silicon are presented. They are based on e...
The microscopic model of the Si (001) crystal surface was investigated by first principles calculati...
The microscopic model of the Si (001) crystal surface was investigated by first principles calculati...
The properties of multi-vacancy and multi-interstitial defects that possess luminescent bands around...
International audienceWe show that the solid-phase epitaxial regrowth of amorphous layers created by...
The properties of multi-vacancy and multi-interstitial defects that possess luminescent bands around...
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