The electric field E within the i-layer of hydrogenated amorphous silicon (a-Si:H) solar cells strongly affects the cell performances, and, specifically, the fill factor FF. It governs the drift length Ldrift = μτE which is the crucial parameter limiting charge collection. Ideally, a constant electric field is assumed across the i-layer, whereas in real devices, it is deformed by charged band tail states and dangling bonds. If the i-layer is too thick or has a high density of charged defects, E is deformed and reduced. To determine theoretically the charge states of band tails and dangling bonds, we must know the carrier density profiles within the i-layer. Here, the SunShine program is used to determine carrier generation profiles within i...
Hole drift mobilities in hydrogenated amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:...
An analytical model of an amorphous silicon p-i-n solar cell is presented to describe its photovolta...
In the scientific literature the density of states of hydrogenated amorphous silicon has been assume...
We describe a model for a-Si:H based pin solar cells derived primarily from valence bandtail propert...
The effects of low hole mobilities in the intrinsic layer of pin solar cells are illustrated using g...
It is common for the fill factor to decrease with increasing illumination intensity in hydrogenated ...
In this article, two factors that limit the performance of HIT solar cells (Heterojunction with Int...
We present temperature-dependent measurements and modeling for a thickness series of hydrogenated am...
Well defined sequences of non-uniform and uniform degradation steps are applied on several high qual...
The properties of pin solar cells based on photogeneration of charge carriers into lowmobility mater...
This dissertation reports measurements on and modeling of hydrogenated amorphous silicon (a-Si:H) ni...
We summarize an extensive study on the impact of absorber layer defect density on the performance of...
Recombination losses of a-Si:H based p-i-n solar cells in the annealed state are analyzed with devic...
To investigate the limiting role of electronic defects in the absorber layer of amorphous and microc...
Solar cells are currently evaluated under laboratory conditions and not under realistic operating co...
Hole drift mobilities in hydrogenated amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:...
An analytical model of an amorphous silicon p-i-n solar cell is presented to describe its photovolta...
In the scientific literature the density of states of hydrogenated amorphous silicon has been assume...
We describe a model for a-Si:H based pin solar cells derived primarily from valence bandtail propert...
The effects of low hole mobilities in the intrinsic layer of pin solar cells are illustrated using g...
It is common for the fill factor to decrease with increasing illumination intensity in hydrogenated ...
In this article, two factors that limit the performance of HIT solar cells (Heterojunction with Int...
We present temperature-dependent measurements and modeling for a thickness series of hydrogenated am...
Well defined sequences of non-uniform and uniform degradation steps are applied on several high qual...
The properties of pin solar cells based on photogeneration of charge carriers into lowmobility mater...
This dissertation reports measurements on and modeling of hydrogenated amorphous silicon (a-Si:H) ni...
We summarize an extensive study on the impact of absorber layer defect density on the performance of...
Recombination losses of a-Si:H based p-i-n solar cells in the annealed state are analyzed with devic...
To investigate the limiting role of electronic defects in the absorber layer of amorphous and microc...
Solar cells are currently evaluated under laboratory conditions and not under realistic operating co...
Hole drift mobilities in hydrogenated amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:...
An analytical model of an amorphous silicon p-i-n solar cell is presented to describe its photovolta...
In the scientific literature the density of states of hydrogenated amorphous silicon has been assume...