We have demonstrated an original approach for fabricating microcavities in GaN grown on Si. Holes are etched in the Si substrate and highly reflective dielectric mirrors are deposited on both front and back sides. The cavity has been optically characterized and the results validate our approach
Nonpolar GaN based microcavity (MC) made of a bottom AlN/GaN distributed Bragg reflector (DBR) and a...
We report the growth over 2 in. sapphire substrates of crack-free fully epitaxial nitride-based micr...
Strong light-matter coupling is demonstrated at low temperature in an ultrathin GaN microcavity fabr...
The optical properties and fabrication of ultrathin GaN-based microcavities grown on silicon substra...
This thesis describes the fabrication and characterisation of double dielectric mirror GaN-based mic...
Two routes for the fabrication of bulk GaN microcavities embedded between two dielectric mirrors are...
Photoluminescence measurements are used to investigate GaN microcavities formed between two all-oxid...
We describe the fabrication and optical properties of a 3λ/2 InGaN/GaN-based microcavity using "uppe...
The use of lateral overgrowth techniques to develop III-nitride microcavities with both mirrors fabr...
Resonant-cavity InGaN/GaN quantum well light emitting diodes have been fabricated. Nitride layers we...
A bulk GaN half-wave (lambda /2) cavity is grown on Si(Ill) substrate by molecular beam epitaxy. It ...
The use of lateral overgrowth techniques to develop III-nitride microcavities with both mirrors fabr...
The effect of an etch-back step to control the cavity length within GaN-based microcavities formed b...
Comparable microcavities with 3/2 (~240 nm) active regions containing distributed (In,Ga)N quantum w...
The development of III-nitride-based (Al,Ga,In(N)) microcavity lasers is a challenging task. Signifi...
Nonpolar GaN based microcavity (MC) made of a bottom AlN/GaN distributed Bragg reflector (DBR) and a...
We report the growth over 2 in. sapphire substrates of crack-free fully epitaxial nitride-based micr...
Strong light-matter coupling is demonstrated at low temperature in an ultrathin GaN microcavity fabr...
The optical properties and fabrication of ultrathin GaN-based microcavities grown on silicon substra...
This thesis describes the fabrication and characterisation of double dielectric mirror GaN-based mic...
Two routes for the fabrication of bulk GaN microcavities embedded between two dielectric mirrors are...
Photoluminescence measurements are used to investigate GaN microcavities formed between two all-oxid...
We describe the fabrication and optical properties of a 3λ/2 InGaN/GaN-based microcavity using "uppe...
The use of lateral overgrowth techniques to develop III-nitride microcavities with both mirrors fabr...
Resonant-cavity InGaN/GaN quantum well light emitting diodes have been fabricated. Nitride layers we...
A bulk GaN half-wave (lambda /2) cavity is grown on Si(Ill) substrate by molecular beam epitaxy. It ...
The use of lateral overgrowth techniques to develop III-nitride microcavities with both mirrors fabr...
The effect of an etch-back step to control the cavity length within GaN-based microcavities formed b...
Comparable microcavities with 3/2 (~240 nm) active regions containing distributed (In,Ga)N quantum w...
The development of III-nitride-based (Al,Ga,In(N)) microcavity lasers is a challenging task. Signifi...
Nonpolar GaN based microcavity (MC) made of a bottom AlN/GaN distributed Bragg reflector (DBR) and a...
We report the growth over 2 in. sapphire substrates of crack-free fully epitaxial nitride-based micr...
Strong light-matter coupling is demonstrated at low temperature in an ultrathin GaN microcavity fabr...
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