Use of scanning capacitance microscopy for controlling wafer processing

Scanning capacitance microscopy and electrostatic force microscopy have been used to characterize commercial semiconductor devices at various stages of the fabrication process. These methods, combined with conventional atomic force microscopy, allow to visualize qualitatively the oxide thickness, the nature of dopants and the exact position of implanted areas. (C) 2002 Elsevier Science Ltd. All rights reserved