Heterojunction band lineups have been investigated for over 40 years, and still are one of the most difficult open problems in condensed matter research-with an immediate impact on heterojunction devices. Steady progress has been made at least in understanding the ingredients of the band lineup process since the advent of surface-sensitive techniques in this field. Empirical links with the problem of Schottky barriers were discovered, and for both cases ''extreme' models based on only one ingredient had to be abandoned except in very special cases. A whole array of new and advanced instruments such as ultrabright synchrotron sources, photoemission spectromicroscopes, and free electron lasers is now being developed that will allow a rejuvena...
The experimental and theoretical progress in understanding the electronic structure and the related ...
The height of semiconductor heterojunction band offsets (band discontinuities) determines the feasab...
The variation of barrier height with the band gap in the metal/heterojunction systems is related to ...
A series of events has revolutionized the research on semiconductor interfaces. One of the most inte...
The technique of photoelectron spectroscopy has contributed tremendously to our knowledge on the pro...
The use of surface-sensitive experimental techniques has produced in recent years important advances...
Fermi-level pinning behavior has been observed at the free surface, oxide interface, metal interface...
The role of defects in heterojunctions was investigated. The density of such defects required to pin...
The feasibility of creating homojunction band discontinuities by dipole intralayers was recently dem...
The thesis is organized as follows: Oh. 1 is a brief introduction to the field of the physics of se...
Thin Al intralayers induce changes in the valence-band discontinuities for the Ge/ZnSe(110) and the ...
We review in this paper the electronic properties of semiconductor heterojunctions. We focus on inte...
In the present paper we discuss the electronic properties of semiconductor heterojunctions, focusing...
When two semiconductors are joined at a heterojunction, discontinuities occur in the valence bands a...
Heterovalent semiconductor heterostructures, unlike isovalent semiconductor heterostructures, exhibi...
The experimental and theoretical progress in understanding the electronic structure and the related ...
The height of semiconductor heterojunction band offsets (band discontinuities) determines the feasab...
The variation of barrier height with the band gap in the metal/heterojunction systems is related to ...
A series of events has revolutionized the research on semiconductor interfaces. One of the most inte...
The technique of photoelectron spectroscopy has contributed tremendously to our knowledge on the pro...
The use of surface-sensitive experimental techniques has produced in recent years important advances...
Fermi-level pinning behavior has been observed at the free surface, oxide interface, metal interface...
The role of defects in heterojunctions was investigated. The density of such defects required to pin...
The feasibility of creating homojunction band discontinuities by dipole intralayers was recently dem...
The thesis is organized as follows: Oh. 1 is a brief introduction to the field of the physics of se...
Thin Al intralayers induce changes in the valence-band discontinuities for the Ge/ZnSe(110) and the ...
We review in this paper the electronic properties of semiconductor heterojunctions. We focus on inte...
In the present paper we discuss the electronic properties of semiconductor heterojunctions, focusing...
When two semiconductors are joined at a heterojunction, discontinuities occur in the valence bands a...
Heterovalent semiconductor heterostructures, unlike isovalent semiconductor heterostructures, exhibi...
The experimental and theoretical progress in understanding the electronic structure and the related ...
The height of semiconductor heterojunction band offsets (band discontinuities) determines the feasab...
The variation of barrier height with the band gap in the metal/heterojunction systems is related to ...