Switching and imprint effects as a function of fatigue in Pt-PZT-Pt ferroelectric capacitors (FeCap) were studied by means of Atomic Force Microscopy (AFM). This approach enable the local characterisation of the ferroelectric properties. It is found that although fatigue appears to occur, as expected, "region by region" and shows a preferential direction for the polarisation, the dead areas can consist of an unequal quantity of very small frozen regions oriented in both directions. This coexistence gives rise to regions with different piezoelectric activity and degree of fatigue. The surviving areas also contain a minority of small frozen regions which manifest itself by shifting the piezoelectric loops along the y-axis. In addition it was ...
Polarization fatigue, i.e., the loss of polarization of ferroelectric capacitors upon field cycling,...
Polarization fatigue, i.e., the loss of polarization of ferroelectric capacitors upon field cycling,...
The unique properties of ferroelectric materials enable a plethora of applications, which are hinder...
Stress-induced changes in the imprint and switching behavior of (111)-oriented Pb(Zr,Ti)O-3 (PZT)-ba...
Stress-induced changes in the imprint and switching behavior of (111)-oriented Pb(Zr,Ti)O-3 (PZT)-ba...
The evolution of the domain structure in lead zirconate titanate ceramics in the course of polarizat...
The influence of polarization fatigue on domain patterns of commercial lead zirconate titanate ceram...
The influence of polarization fatigue on domain patterns of commercial lead zirconate titanate ceram...
Piezoresponse force microscopy has been used to perform nanoscale characterization of the spatial va...
A mechanism for the switching behavior of (111)-oriented Pb(Zr,Ti)O3-based 1×1.5 μm2 capacitors has ...
Piezoresponse force microscopy has been used to perform nanoscale characterization of the spatial va...
Stress-induced changes in the imprint and switching behavior of (111)-oriented Pb(Zr,Ti)O3 (PZT)-bas...
Ferroelectric random access memory (FeRAM) is because of its combination of non-volatile data storag...
A mechanism for the switching behavior of (111)-oriented Pb(Zr,Ti)O3-based 1×1.5 μm2 capacitors has ...
In the present study, piezoelectric, conductivity and dielectric measurements have been performed on...
Polarization fatigue, i.e., the loss of polarization of ferroelectric capacitors upon field cycling,...
Polarization fatigue, i.e., the loss of polarization of ferroelectric capacitors upon field cycling,...
The unique properties of ferroelectric materials enable a plethora of applications, which are hinder...
Stress-induced changes in the imprint and switching behavior of (111)-oriented Pb(Zr,Ti)O-3 (PZT)-ba...
Stress-induced changes in the imprint and switching behavior of (111)-oriented Pb(Zr,Ti)O-3 (PZT)-ba...
The evolution of the domain structure in lead zirconate titanate ceramics in the course of polarizat...
The influence of polarization fatigue on domain patterns of commercial lead zirconate titanate ceram...
The influence of polarization fatigue on domain patterns of commercial lead zirconate titanate ceram...
Piezoresponse force microscopy has been used to perform nanoscale characterization of the spatial va...
A mechanism for the switching behavior of (111)-oriented Pb(Zr,Ti)O3-based 1×1.5 μm2 capacitors has ...
Piezoresponse force microscopy has been used to perform nanoscale characterization of the spatial va...
Stress-induced changes in the imprint and switching behavior of (111)-oriented Pb(Zr,Ti)O3 (PZT)-bas...
Ferroelectric random access memory (FeRAM) is because of its combination of non-volatile data storag...
A mechanism for the switching behavior of (111)-oriented Pb(Zr,Ti)O3-based 1×1.5 μm2 capacitors has ...
In the present study, piezoelectric, conductivity and dielectric measurements have been performed on...
Polarization fatigue, i.e., the loss of polarization of ferroelectric capacitors upon field cycling,...
Polarization fatigue, i.e., the loss of polarization of ferroelectric capacitors upon field cycling,...
The unique properties of ferroelectric materials enable a plethora of applications, which are hinder...