We investigate dc and ac transport in silicene in the presence of a perpendicular electric field Ez that tunes its band gap, finite temperatures, and level broadening. The interplay of silicene's strong spin-orbit interaction and the field Ez gives rise to topological phase transitions. We show that at a critical value of Ez the dc spin-Hall conductivity undergoes a transition from a topological insulator phase to a band insulator one. We also show that the spin- and valley-Hall conductivities exhibit a strong temperature dependence. In addition, the longitudinal conductivity is examined as a function of the carrier density ne, for screened Coulomb impurities of density ni, and found to scale linearly with ne/ni. It also exhibits an upward ...
Silicene takes precedence over graphene due to its buckling type structure and strong spin orbit cou...
Silicene is a monolayer of silicon atoms forming a two-dimensional honeycomb lattice. We i...
The quantum spin Hall (QSH) effect predicted in silicene has raised exciting prospects of new device...
We investigate dc and ac transport in silicene in the presence of a perpendicular electric field Ez ...
The low-buckled material silicene undergoes abundant topological phase transitions under external fi...
Silicene is a monolayer of silicon atoms forming a honeycomb lattice. The lattice is actua...
In an effort to surmount the issues that arise when attempting to scale transistors down to the low ...
It has been widely accepted that silicene is a topological insulator, and its gap closes first and t...
Abstract We study the spin- and valley-dependent energy band and transport property of silicene unde...
Silicene consists of a monolayer of silicon atoms in a buckled honeycomb structure. It was recently ...
Abstract. Silicene consists of a monolayer of silicon atoms in a buckled honeycomb structure. It was...
We investigate the transport properties in a zigzag silicene nanoribbon in the presence of an extern...
The low-energy physics of silicene is described by Dirac electrons with a strong spin-orbit interact...
We have studied the time evolution of electron wave packets in silicene under perpendicular magnetic...
Detailed knowledge relating to the interactions between silicene and normal metal is cruci...
Silicene takes precedence over graphene due to its buckling type structure and strong spin orbit cou...
Silicene is a monolayer of silicon atoms forming a two-dimensional honeycomb lattice. We i...
The quantum spin Hall (QSH) effect predicted in silicene has raised exciting prospects of new device...
We investigate dc and ac transport in silicene in the presence of a perpendicular electric field Ez ...
The low-buckled material silicene undergoes abundant topological phase transitions under external fi...
Silicene is a monolayer of silicon atoms forming a honeycomb lattice. The lattice is actua...
In an effort to surmount the issues that arise when attempting to scale transistors down to the low ...
It has been widely accepted that silicene is a topological insulator, and its gap closes first and t...
Abstract We study the spin- and valley-dependent energy band and transport property of silicene unde...
Silicene consists of a monolayer of silicon atoms in a buckled honeycomb structure. It was recently ...
Abstract. Silicene consists of a monolayer of silicon atoms in a buckled honeycomb structure. It was...
We investigate the transport properties in a zigzag silicene nanoribbon in the presence of an extern...
The low-energy physics of silicene is described by Dirac electrons with a strong spin-orbit interact...
We have studied the time evolution of electron wave packets in silicene under perpendicular magnetic...
Detailed knowledge relating to the interactions between silicene and normal metal is cruci...
Silicene takes precedence over graphene due to its buckling type structure and strong spin orbit cou...
Silicene is a monolayer of silicon atoms forming a two-dimensional honeycomb lattice. We i...
The quantum spin Hall (QSH) effect predicted in silicene has raised exciting prospects of new device...