Topological insulators are characterized by an insulating bulk, and an odd number of Dirac cones in the surface. Their existence are due a band inversion in the bulk phase created by a strong spin orbit coupling. Those metallic states have their spin polarization locked in a plane giving rise to a chiral spin texture, similar to the quantum spin hall effect. Such spin helicity suppresses backscattering processes. Based on first principles calculations, we performed a systematic study of transition metal (TM) impurities (Co, Mn, Ni, Cr and Fe) lying on the topmost layers of the Bi2Se3 topological insulator. Based upon formation energy results, by considering a number of plausible configurations, we find an energetic preference for the TMs oc...
We study the effect of Fe impurities in Bi2Se3 on the magnetic phase and topological insulating prop...
The spin-helical surface states in a three-dimensional topological insulator (TI), such as Bi2Se3, a...
We present a first-principles study of electronic properties of ultrathin films of topological insul...
Topological insulators are characterized by an insulating bulk, and an odd number of Dirac cones in ...
Topological insulators are characterized by an insulating bulk, and an odd number of Dirac cones in ...
Topological insulators are materials that have a bulk band gap similar to commonly known insulators,...
The tailoring, of topological surface states in topological insulators is essential for device appli...
We investigate in-gap states emerging when a single 3d transition metal impurity is embedded in topo...
We show that the chemical inhomogeneity in ternary three-dimensional topological insulators preserve...
We investigate in-gap states emerging when a single 3d transition metal impurity is embedded in topo...
We show that the chemical inhomogeneity in ternary three-dimensional topological insulators preserve...
Topological insulators (TIs) are recently predicted, and much studied, new quantum materials. These ...
Topological insulators embody a state of bulk matter characterizedby spin-momentum-locked surface st...
The effect of atomic impurities including N, O, Na, Ti and Co on the surface states of the topologic...
International audienceWhile some of the most elegant applications of topological insulators, such as...
We study the effect of Fe impurities in Bi2Se3 on the magnetic phase and topological insulating prop...
The spin-helical surface states in a three-dimensional topological insulator (TI), such as Bi2Se3, a...
We present a first-principles study of electronic properties of ultrathin films of topological insul...
Topological insulators are characterized by an insulating bulk, and an odd number of Dirac cones in ...
Topological insulators are characterized by an insulating bulk, and an odd number of Dirac cones in ...
Topological insulators are materials that have a bulk band gap similar to commonly known insulators,...
The tailoring, of topological surface states in topological insulators is essential for device appli...
We investigate in-gap states emerging when a single 3d transition metal impurity is embedded in topo...
We show that the chemical inhomogeneity in ternary three-dimensional topological insulators preserve...
We investigate in-gap states emerging when a single 3d transition metal impurity is embedded in topo...
We show that the chemical inhomogeneity in ternary three-dimensional topological insulators preserve...
Topological insulators (TIs) are recently predicted, and much studied, new quantum materials. These ...
Topological insulators embody a state of bulk matter characterizedby spin-momentum-locked surface st...
The effect of atomic impurities including N, O, Na, Ti and Co on the surface states of the topologic...
International audienceWhile some of the most elegant applications of topological insulators, such as...
We study the effect of Fe impurities in Bi2Se3 on the magnetic phase and topological insulating prop...
The spin-helical surface states in a three-dimensional topological insulator (TI), such as Bi2Se3, a...
We present a first-principles study of electronic properties of ultrathin films of topological insul...