The transport properties of the two-dimensional system in HgTe-based quantum wells containing simultaneously electrons and holes of low densities are examined. The Hall resistance, as a function of perpendicular magnetic field, reveals an unconventional behavior, different from the classical N-shaped dependence typical for bipolar systems with electron-hole asymmetry. The quantum features of magnetotransport are explained by means of numerical calculation of the Landau level spectrum based on the Kane Hamiltonian. The origin of the quantum Hall plateau sigma(xy) = 0 near the charge neutrality point is attributed to special features of Landau quantization in our system.FAPESPFAPESPCNPqCNPqRFBIRFBIRASRASRFBR [12-02-00054-a]RFB
We review recent results from magneto-transport studies of an InAs/GaSb based electron-hole system. ...
We present observations of an anisotropic resistance state at Landau level filling factor ν=5/2 in a...
We analyze experimental quantum Hall data from a wide range of different materials, including semico...
The transport properties of the two-dimensional system in HgTe-based quantum wells containing simult...
The transport properties of the two-dimensional system in HgTe-based quantum wells containing simult...
We study the transport properties of HgTe-based quantum wells containing simultaneously electrons an...
We present the latest results of our transport measurements, in the quantum Hall (QH) regime, in two...
We report on theoretical and experimental investigations of the integer quantized Hall effect in nar...
Magnetotransport characteristics of dilute two-dimensional hole gases (2DHGs) in Si/SiGe heterostruc...
We report on theoretical and experimental investigations of the integer quantized Hall effect in nar...
Nonlocal resistance is studied in a two-dimensional system with a simultaneous presence of electrons...
We have observed the quantum Hall effect in a high mobility two-dimensional electron gas to filling ...
In this first section, we present a short review of theoretical approaches to the quantum Hall effec...
The quantum Hall effect is usually observed when the two-dimensional electron gas is subjected to an...
The quantum Hall effect and the structure of magnetoresistance oscillations observed in multilayer p...
We review recent results from magneto-transport studies of an InAs/GaSb based electron-hole system. ...
We present observations of an anisotropic resistance state at Landau level filling factor ν=5/2 in a...
We analyze experimental quantum Hall data from a wide range of different materials, including semico...
The transport properties of the two-dimensional system in HgTe-based quantum wells containing simult...
The transport properties of the two-dimensional system in HgTe-based quantum wells containing simult...
We study the transport properties of HgTe-based quantum wells containing simultaneously electrons an...
We present the latest results of our transport measurements, in the quantum Hall (QH) regime, in two...
We report on theoretical and experimental investigations of the integer quantized Hall effect in nar...
Magnetotransport characteristics of dilute two-dimensional hole gases (2DHGs) in Si/SiGe heterostruc...
We report on theoretical and experimental investigations of the integer quantized Hall effect in nar...
Nonlocal resistance is studied in a two-dimensional system with a simultaneous presence of electrons...
We have observed the quantum Hall effect in a high mobility two-dimensional electron gas to filling ...
In this first section, we present a short review of theoretical approaches to the quantum Hall effec...
The quantum Hall effect is usually observed when the two-dimensional electron gas is subjected to an...
The quantum Hall effect and the structure of magnetoresistance oscillations observed in multilayer p...
We review recent results from magneto-transport studies of an InAs/GaSb based electron-hole system. ...
We present observations of an anisotropic resistance state at Landau level filling factor ν=5/2 in a...
We analyze experimental quantum Hall data from a wide range of different materials, including semico...