Graphene Growth through Chemical Vapor Deposition - Optimization of Growth and Transfer Parameters

The goal of this thesis work is to investigate the possibility to grow graphene by Chemical Vapor Deposition (CVD) on copper foil with acetylene as a precursor and varigon (5\% H$_2$ in Ar) as a carrier gas. The possibility of nitrogen doping by ammonia treatment during the growth process is also investigated. The possibility of graphene transfer, with the use of Poly(Methyl Metacrylate) (PMMA), from the copper onto another target substrate, Flourine doped Tin Oxide (FTO), is also explored. The main technique of characterization of the grown and transfered graphene is Raman spectroscopy, a great tool for investigating the number of graphene layers and amount of defects. Other characterization methods used are Scanning Electron Microscopy (SEM) X-ray Photoelectron Spectroscopy (XPS) to investigate morphology and elemental composition, respectively. The result of this thesis study is that graphene growth is entirely possible with acetylene as a precursor, as shown by the Raman spectroscopy, XPS and SEM. The grown graphene has a high quality with few layers and a low number of defects. The ammonia treatment, however, doesn't seem to have an immediate effect on the graphene growth. The XPS data indicates that there are no nitrogen doping in the graphene, though there might be a correlation between the ammonia and the number of layers, but further investigations has to be made. Transfer is also proven possible with the method developed. However, improvements to the transfer method can be done since there are both larger tares, caused by the transfer onto the FTO, as well as microscopic tares, possibly caused by thermal expansion of the PMMA