10-20 Gbit/s GaAs/AlGaAs HEMT ICs for high speed data links

A set of ICs has been developed for high-speed data links at data rates above 10 Gbit/s. A recessed gate process for double pulse doped quantum well transistors has been used with e-beam written 0.3- μm gates. A 4 bit multiplexer and a laser diode driver for the transmitter as well as a transimpedance amplifier, bit synchronizer, and 4 bit demultiplexer for the receiver have been successfully operated with data rates up to 20 Gbit/s