18 Gbit/s monolithically integrated 2:1 multiplexer and laser driving using 0.3 μm gate length quantum well HEMTs

High power modulator driver ICs up to 30 Gb/s with AlGaAs/GaAs HEMTs

Lao, Z.
Thiede, A.
Nowotny, U.
Schlechtweg, M.
Hurm, V.
Bronner, W.
Hornung, J.
Rieger-Motzer, M.
Kaufel, G.
Köhler, K.
Hülsmann, A.

January 1997

Two monolithic integrated transmitter circuits of a modulator driver and a modulator driver with a 2...

Mixed signal circuits based on a 0.2 mu m gate length AlGaAs/GaAs/AlGaAs quantum well HEMT technology

Thiede, A.
Schlechtweg, M.
Hurm, V.
Wang, Z.-G.
Lang, M.
Leber, P.
Lao, Z.
Nowotny, U.
Rieger-Motzer, M.
Sedler, M.
Köhler, K.
Bronner, W.
Fink, T.
Hülsmann, A.
Kaufel, G.
Raynor, B.
Schneider, J.
Jakobus, T.
Schroth, J.
Berroth, M.

January 1997

During the past 5 years numerous mixed signal circuits have been designed, processed, and characteri...

Ultralow Threshold Quantum Well Lasers For Computer Interconnects

Mittelstein, Michael
Ury, Israel
Bar-Chaim, Nadav
Yariv, Amnon

January 1990

Optical computer interconnects appear very attractive when integration of state of the art technolog...

18 Gbit/s monolithically integrated 2 to 1 multiplexer and laser driving using 0.3 mym gate length quantum well hemt's.

Nowotny, U.
Bronner, W.
Hofmann, P.
Hülsmann, A.
Raynor, B.
Schneider, J.
Berroth, M.
Köhler, K.
Wang, Z.-G.

January 1992

A monolithically integrated 2 : 1 multiplexer and laser diode driver was developed, using AlGaAs qua...

Integrated laser-diode voltage driver for 20-Gb/s optical systems using 0.3- μm gate length quantum-well HEMT's

Wang, Zhigong
Berroth, Manfred
Nowotny, Ulrich
Ludwig, Manfred
Hofmann, Peter
Hülsmann, Axel
Köhler, Klaus
Raynor, Brian
Schneider, Joachim

January 1993

An integrated laser-diode voltage driver (LDVD) making use of enhancement/depletion AlGaAs-GaAs quan...

Integrated laser-diode voltage driver for 20-Gb/s optical systems using 0.3-mym gate length quantum-well HEMT's.

Wang, Z.-G.
Berroth, M.
Nowotny, U.
Ludwig, M.
Hofmann, P.
Hülsmann, A.
Köhler, K.
Raynor, B.
Schneider, J.

January 1993

An integrated laser-diode voltage driver (LDVD) making use of enhancement/depletion AlGaAs/GaAs quan...

14 GHz bandwidth MSM photodiode AlGaAs/GaAs HEMT monolithic integrated optoelectronic receiver

Hurm, Volker
Ludwig, Manfred
Rosenzweig, Josef
Benz, Willi
Berroth, Manfred
Bosch, Roland
Bronner, Wolfgang
Hülsmann, Axel
Köhler, Klaus
Raynor, Brian
Schneider, Joachim

January 1993

A monolithic optoelectronic receiver consisting of an MSM photodiode and a two-stage amplifer has be...

15 Gbit/s integrated laser diode driver using 0,3 mym gate length quantum well transistors.

Nowotny, U.
Gotzeina, W.
Hofmann, P.
Hülsmann, A.
Raynor, B.
Schneider, J.
Berroth, M.
Kaufel, G.
Köhler, K.
Wang, Z.-G.

January 1992

An integrated laser diode driver was realised using enhancement/depletion 0.3 Mym recessed-gate AlGa...

10-20 Gbit/s GaAs/AlGaAs HEMT ICs for high speed data links

Berroth, Manfred
Hurm, Volker
Lang, Manfred
Ludwig, Manfred
Nowotny, Ulrich
Wang, Zhigong
Wennekers, Peter
Hülsmann, Axel
Kaufel, Gudrun
Köhler, Klaus
Raynor, Brian
Schneider, Joachim

January 1992

A set of ICs has been developed for high-speed data links at data rates above 10 Gbit/s. A recessed ...

7.4 Gbit/s monolithically integrated GaAs/AlGaAs laser diode-laser driver structure.

Hornung, J.
Wang, Z.-G.
Bronner, W.
Olander, E.
Köhler, K.
Ganser, P.
Raynor, B.
Benz, W.
Ludwig, M.

January 1993

A molecular beam epitaxy (MBE) grown (GaAs/AlGaAs multiquantum well laser, monolithically integrated...

Molecular beam epitaxy and technology for the monolithic integration of quantum well lasers and AlGaAs/GaAs/AlGaAs-HEMT electronics

Bronner, W.
Hornung, J.
Köhler, K.
Olander, E.

January 1994

In this presentation the various technology steps for the monolithic integration of GaAs quantum wel...

10 Gb/s monolithic integrated MSM-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver

Hurm, Volker
Rosenzweig, Josef
Ludwig, Manfred
Benz, Willi
Osorio, Ricardo
Berroth, Manfred
Hülsmann, Axel
Kaufel, Gudrun
Köhler, Klaus
Raynor, Brian
Schneider, Joachim

January 1991

A photoreceiver based on a metal-semiconductor-metal (MSM) photodiode and AlGaAs/GaAs HEMTs is prese...

High-speed long-wavelength monolithic integrated photoreceivers grown on GaAs

Hurm, V.
Benz, W.
Bronner, W.
Fink, T.
Köhler, K.
Lao, Z.
Ludwig, M.
Raynor, B.
Rosenzweig, J.
Windscheif, J.

January 1997

The first 20 Gbit/s 1.3-1.55 mu m wavelength monolithic integrated photoreceiver grown on GaAs subst...

Integration of a quantum well laser with AlGaAs/GaAs-HEMT electronics.

Bronner, W.
Hornung, J.
Köhler, K.
Olander, E.
Wang, Z.-G.

January 1993

In this presentation the various technology steps for the monolithic integration of GaAs quantum wel...

20 Gbit/s 2 to 1 multiplexer using 0.3 mym gate length double pulse doped Quantum Well GaAs/AlGaAs transistors.

Nowotny, U.
Lang, M.
Hurm, V.
Hülsmann, A.
Kaufel, G.
Raynor, B.
Schneider, J.
Berroth, M.
Köhler, K.

January 1991

A high speed 2:1 multiplexer circuit in source coupled FET logic has been developed and fabricated u...

High power modulator driver ICs up to 30 Gb/s with AlGaAs/GaAs HEMTs

Lao, Z.
Thiede, A.
Nowotny, U.
Schlechtweg, M.
Hurm, V.
Bronner, W.
Hornung, J.
Rieger-Motzer, M.
Kaufel, G.
Köhler, K.
Hülsmann, A.

January 1997

Two monolithic integrated transmitter circuits of a modulator driver and a modulator driver with a 2...

Mixed signal circuits based on a 0.2 mu m gate length AlGaAs/GaAs/AlGaAs quantum well HEMT technology

Thiede, A.
Schlechtweg, M.
Hurm, V.
Wang, Z.-G.
Lang, M.
Leber, P.
Lao, Z.
Nowotny, U.
Rieger-Motzer, M.
Sedler, M.
Köhler, K.
Bronner, W.
Fink, T.
Hülsmann, A.
Kaufel, G.
Raynor, B.
Schneider, J.
Jakobus, T.
Schroth, J.
Berroth, M.

January 1997

During the past 5 years numerous mixed signal circuits have been designed, processed, and characteri...

Ultralow Threshold Quantum Well Lasers For Computer Interconnects

Mittelstein, Michael
Ury, Israel
Bar-Chaim, Nadav
Yariv, Amnon

January 1990

Optical computer interconnects appear very attractive when integration of state of the art technolog...

18 Gbit/s monolithically integrated 2 to 1 multiplexer and laser driving using 0.3 mym gate length quantum well hemt's.

Nowotny, U.
Bronner, W.
Hofmann, P.
Hülsmann, A.
Raynor, B.
Schneider, J.
Berroth, M.
Köhler, K.
Wang, Z.-G.

January 1992

A monolithically integrated 2 : 1 multiplexer and laser diode driver was developed, using AlGaAs qua...

Integrated laser-diode voltage driver for 20-Gb/s optical systems using 0.3- μm gate length quantum-well HEMT's

Wang, Zhigong
Berroth, Manfred
Nowotny, Ulrich
Ludwig, Manfred
Hofmann, Peter
Hülsmann, Axel
Köhler, Klaus
Raynor, Brian
Schneider, Joachim

January 1993

An integrated laser-diode voltage driver (LDVD) making use of enhancement/depletion AlGaAs-GaAs quan...

Integrated laser-diode voltage driver for 20-Gb/s optical systems using 0.3-mym gate length quantum-well HEMT's.

Wang, Z.-G.
Berroth, M.
Nowotny, U.
Ludwig, M.
Hofmann, P.
Hülsmann, A.
Köhler, K.
Raynor, B.
Schneider, J.

January 1993

An integrated laser-diode voltage driver (LDVD) making use of enhancement/depletion AlGaAs/GaAs quan...

14 GHz bandwidth MSM photodiode AlGaAs/GaAs HEMT monolithic integrated optoelectronic receiver

Hurm, Volker
Ludwig, Manfred
Rosenzweig, Josef
Benz, Willi
Berroth, Manfred
Bosch, Roland
Bronner, Wolfgang
Hülsmann, Axel
Köhler, Klaus
Raynor, Brian
Schneider, Joachim

January 1993

A monolithic optoelectronic receiver consisting of an MSM photodiode and a two-stage amplifer has be...

15 Gbit/s integrated laser diode driver using 0,3 mym gate length quantum well transistors.

Nowotny, U.
Gotzeina, W.
Hofmann, P.
Hülsmann, A.
Raynor, B.
Schneider, J.
Berroth, M.
Kaufel, G.
Köhler, K.
Wang, Z.-G.

January 1992

An integrated laser diode driver was realised using enhancement/depletion 0.3 Mym recessed-gate AlGa...

10-20 Gbit/s GaAs/AlGaAs HEMT ICs for high speed data links

Berroth, Manfred
Hurm, Volker
Lang, Manfred
Ludwig, Manfred
Nowotny, Ulrich
Wang, Zhigong
Wennekers, Peter
Hülsmann, Axel
Kaufel, Gudrun
Köhler, Klaus
Raynor, Brian
Schneider, Joachim

January 1992

A set of ICs has been developed for high-speed data links at data rates above 10 Gbit/s. A recessed ...

7.4 Gbit/s monolithically integrated GaAs/AlGaAs laser diode-laser driver structure.

Hornung, J.
Wang, Z.-G.
Bronner, W.
Olander, E.
Köhler, K.
Ganser, P.
Raynor, B.
Benz, W.
Ludwig, M.

January 1993

A molecular beam epitaxy (MBE) grown (GaAs/AlGaAs multiquantum well laser, monolithically integrated...

Molecular beam epitaxy and technology for the monolithic integration of quantum well lasers and AlGaAs/GaAs/AlGaAs-HEMT electronics

Bronner, W.
Hornung, J.
Köhler, K.
Olander, E.

January 1994

In this presentation the various technology steps for the monolithic integration of GaAs quantum wel...

10 Gb/s monolithic integrated MSM-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver

Hurm, Volker
Rosenzweig, Josef
Ludwig, Manfred
Benz, Willi
Osorio, Ricardo
Berroth, Manfred
Hülsmann, Axel
Kaufel, Gudrun
Köhler, Klaus
Raynor, Brian
Schneider, Joachim

January 1991

A photoreceiver based on a metal-semiconductor-metal (MSM) photodiode and AlGaAs/GaAs HEMTs is prese...

High-speed long-wavelength monolithic integrated photoreceivers grown on GaAs

Hurm, V.
Benz, W.
Bronner, W.
Fink, T.
Köhler, K.
Lao, Z.
Ludwig, M.
Raynor, B.
Rosenzweig, J.
Windscheif, J.

January 1997

The first 20 Gbit/s 1.3-1.55 mu m wavelength monolithic integrated photoreceiver grown on GaAs subst...

Integration of a quantum well laser with AlGaAs/GaAs-HEMT electronics.

Bronner, W.
Hornung, J.
Köhler, K.
Olander, E.
Wang, Z.-G.

January 1993

In this presentation the various technology steps for the monolithic integration of GaAs quantum wel...

20 Gbit/s 2 to 1 multiplexer using 0.3 mym gate length double pulse doped Quantum Well GaAs/AlGaAs transistors.

Nowotny, U.
Lang, M.
Hurm, V.
Hülsmann, A.
Kaufel, G.
Raynor, B.
Schneider, J.
Berroth, M.
Köhler, K.

January 1991

A high speed 2:1 multiplexer circuit in source coupled FET logic has been developed and fabricated u...

High power modulator driver ICs up to 30 Gb/s with AlGaAs/GaAs HEMTs

Lao, Z.
Thiede, A.
Nowotny, U.
Schlechtweg, M.
Hurm, V.
Bronner, W.
Hornung, J.
Rieger-Motzer, M.
Kaufel, G.
Köhler, K.
Hülsmann, A.

January 1997

Two monolithic integrated transmitter circuits of a modulator driver and a modulator driver with a 2...

Mixed signal circuits based on a 0.2 mu m gate length AlGaAs/GaAs/AlGaAs quantum well HEMT technology

Thiede, A.
Schlechtweg, M.
Hurm, V.
Wang, Z.-G.
Lang, M.
Leber, P.
Lao, Z.
Nowotny, U.
Rieger-Motzer, M.
Sedler, M.
Köhler, K.
Bronner, W.
Fink, T.
Hülsmann, A.
Kaufel, G.
Raynor, B.
Schneider, J.
Jakobus, T.
Schroth, J.
Berroth, M.

January 1997

During the past 5 years numerous mixed signal circuits have been designed, processed, and characteri...

Ultralow Threshold Quantum Well Lasers For Computer Interconnects

Mittelstein, Michael
Ury, Israel
Bar-Chaim, Nadav
Yariv, Amnon

January 1990

Optical computer interconnects appear very attractive when integration of state of the art technolog...

18 Gbit/s monolithically integrated 2:1 multiplexer and laser driving using 0.3 μm gate length quantum well HEMTs

Abstract

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18 Gbit/s monolithically integrated 2:1 multiplexer and laser driving using 0.3 μm gate length quantum well HEMTs

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18 Gbit/s monolithically integrated 2:1 multiplexer and laser driving using 0.3 &#956;m gate length quantum well HEMTs

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18 Gbit/s monolithically integrated 2:1 multiplexer and laser driving using 0.3 &#956;m gate length quantum well HEMTs

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18 Gbit/s monolithically integrated 2:1 multiplexer and laser driving using 0.3 μm gate length quantum well HEMTs

18 Gbit/s monolithically integrated 2:1 multiplexer and laser driving using 0.3 μm gate length quantum well HEMTs