Add to ORKGAs an enhancement of our previous works in the electrical modelling of microwave and optical-microwave interaction field, this paper shows the result of the research on large signal behaviour (DC I/V curves) of AlGaAs P-HEMT (pseudomorphic high electron mobility transistor) and MESFET devices, in the overall I/V plane, when the incident optical input power is changed and how is possible to include the model into the PSPICE simulator. Experimental results show very good agreement with the theoretical analysis
The long term impact of microwave communication technologies will be functionality simulated and des...
Premi Extraordinari de Doctorat concedit pels programes de doctorat de la UAB per curs acadèmic 2016...
Aquesta tesi adreça el modelatge de dispositius HEMTs. Es presenta un model compacte, de base física...
As an extension of our previous works in the opticalmicrowave interaction field, this paper shows t...
In this paper a new approach to accurately modeling the second order effects controlling the drain t...
In this work presents an analysis of field effect transistors using pulsed voltage sources has been ...
In this paper, an Enhancement-mode Pseudomorphic HEMT has been characterized in terms of its inter...
This paper describes an accurate approach to modelling the effect of ambient temperature (from -70ºC...
En este artículo los autores presentan los pasos efectuados para la determinación de los componentes...
This paper presents a technique to improve the design process of microwave transistors based on two ...
In this paper we present the study of electromagnetic simulation as an educational tool for microwav...
This paper is the result of our research on the smallsignal behavior of a GaAs device, in the overa...
In this contribution an extraction method already proposed by authors and suitable for FET-type devi...
El'objectiu d'aquesta tesi és el modelatge compacte basat en la física dels transistors de pel·lícul...
A comprehensive large-signal HEMT model that provides a realistic description of measured characteri...
The long term impact of microwave communication technologies will be functionality simulated and des...
Premi Extraordinari de Doctorat concedit pels programes de doctorat de la UAB per curs acadèmic 2016...
Aquesta tesi adreça el modelatge de dispositius HEMTs. Es presenta un model compacte, de base física...
As an extension of our previous works in the opticalmicrowave interaction field, this paper shows t...
In this paper a new approach to accurately modeling the second order effects controlling the drain t...
In this work presents an analysis of field effect transistors using pulsed voltage sources has been ...
In this paper, an Enhancement-mode Pseudomorphic HEMT has been characterized in terms of its inter...
This paper describes an accurate approach to modelling the effect of ambient temperature (from -70ºC...
En este artículo los autores presentan los pasos efectuados para la determinación de los componentes...
This paper presents a technique to improve the design process of microwave transistors based on two ...
In this paper we present the study of electromagnetic simulation as an educational tool for microwav...
This paper is the result of our research on the smallsignal behavior of a GaAs device, in the overa...
In this contribution an extraction method already proposed by authors and suitable for FET-type devi...
El'objectiu d'aquesta tesi és el modelatge compacte basat en la física dels transistors de pel·lícul...
A comprehensive large-signal HEMT model that provides a realistic description of measured characteri...
The long term impact of microwave communication technologies will be functionality simulated and des...
Premi Extraordinari de Doctorat concedit pels programes de doctorat de la UAB per curs acadèmic 2016...
Aquesta tesi adreça el modelatge de dispositius HEMTs. Es presenta un model compacte, de base física...