Photoluminescence Enhancement of β-FeSi2 Nanocrystals Controlled by Transport of Holes in Cu-doped n-type Si Substrates

Maeda Yoshihito
Tatsumi Takahide
Noguchi Yuya
Kawakubo Yuki
Kobayashi Hiroyuki
Narumi Kazumasa
Sakai Seiji

Open PDF

Open link

Publication date

June 2014

DOI

10.7567/JJAPCP.3.011107

Publisher

Japan Society of Applied Physics

Abstract

We have investigated PL behavior of β-FeSi2 nanocrystals controlled by transport of holes in Cu-doped n-type Si substrates. PL enhancement was observed and PCI-PL measurements revealed that PL enhancement was attributed to a transport process of holes with a larger time constant in Cu-doped n-Si substrate in which an interval trap process is controlled by Cu doping.International Conference and Summer School on Advanced Silicide Technology 2014, July 19–21, 2014, Tokyo, Japa

Extracted data

We use cookies to provide a better user experience.

Data Protection

Photoluminescence Enhancement of β-FeSi2 Nanocrystals Controlled by Transport of Holes in Cu-doped n-type Si Substrates

Abstract

Extracted data

Photoluminescence Enhancement of β-FeSi2 Nanocrystals Controlled by Transport of Holes in Cu-doped n-type Si Substrates

Abstract

Extracted data

Related items

Related items