Continuous-wave operation, to as high as 7 °C, of 1.5-?m optically pumped vertical-external-cavity surface-emitting lasers is reported. The epitaxial structure, monolithically grown on InP by metal-organic chemical vapor deposition, consists of an InAlAs/GaInAlAs Bragg reflector, an InGaAs/InGaAsP active region, and an InP capping layer. The threshold incident pump intensity is <9 kW/cm2
We have realised an all-epitaxial 1.55 µm vertical cavity laser by employing a single wafer-fusion s...
We present a vertical external-cavity surface-emitting laser operating at 1550 run. The laser compri...
A report is presented on an optically-pumped vertical-external-cavity surface-emitting laser at 1.55...
International audienceThe growth conditions and the operation of a diode-pumped AlGaAsSb/GaInAsSb ty...
This thesis is an experimental investigation on the development of an optically pumped vertical-exte...
Monolithic, oxide-confined, multiple-wavelength vertical-cavity surface-emitting laser arrays with a...
We describe use of AlAsSb/AlGaAsSb lattice matched to InP for distributed Bragg reflectors. These st...
For the first time to our knowledge, high power continuous wave operation has been achieved with a v...
Long-wavelength vertical cavity surface emitting lasers (VCSELs) are considered the best candidate f...
International audienceWe report on the design, fabrication, and characterization of InP-based 1.55 μ...
Vertical external cavity semiconductor lasers have emerged as an interesting technology based on cur...
High-performance InGaAs/InGaAlAs multiple-quantum-well vertical-cavity surface-emitting lasers (VCSE...
International audienceWe report on the design, fabrication, and characterization of InP-based 1.55 µ...
Vertical-cavity surface-emitting lasers (VCSELs) operatingat long wavelength (1.3-1.55µm) are of gre...
A novel 1550 nm optically pumped VECSEL based on wafer fused InAlGaAs/InP-AlGaAs/GaAs half cavity sh...
We have realised an all-epitaxial 1.55 µm vertical cavity laser by employing a single wafer-fusion s...
We present a vertical external-cavity surface-emitting laser operating at 1550 run. The laser compri...
A report is presented on an optically-pumped vertical-external-cavity surface-emitting laser at 1.55...
International audienceThe growth conditions and the operation of a diode-pumped AlGaAsSb/GaInAsSb ty...
This thesis is an experimental investigation on the development of an optically pumped vertical-exte...
Monolithic, oxide-confined, multiple-wavelength vertical-cavity surface-emitting laser arrays with a...
We describe use of AlAsSb/AlGaAsSb lattice matched to InP for distributed Bragg reflectors. These st...
For the first time to our knowledge, high power continuous wave operation has been achieved with a v...
Long-wavelength vertical cavity surface emitting lasers (VCSELs) are considered the best candidate f...
International audienceWe report on the design, fabrication, and characterization of InP-based 1.55 μ...
Vertical external cavity semiconductor lasers have emerged as an interesting technology based on cur...
High-performance InGaAs/InGaAlAs multiple-quantum-well vertical-cavity surface-emitting lasers (VCSE...
International audienceWe report on the design, fabrication, and characterization of InP-based 1.55 µ...
Vertical-cavity surface-emitting lasers (VCSELs) operatingat long wavelength (1.3-1.55µm) are of gre...
A novel 1550 nm optically pumped VECSEL based on wafer fused InAlGaAs/InP-AlGaAs/GaAs half cavity sh...
We have realised an all-epitaxial 1.55 µm vertical cavity laser by employing a single wafer-fusion s...
We present a vertical external-cavity surface-emitting laser operating at 1550 run. The laser compri...
A report is presented on an optically-pumped vertical-external-cavity surface-emitting laser at 1.55...