Blue lasing at room temperature in an optically pumped lattice-matched AlInN/GaN VCSEL structure
- Feltin, E.
- Christmann, G.
- Dorsaz, J.
- Castiglia, A.
- Carlin, J.F.
- Butte, R.
- Grandjean, N.
- Christopoulos, S.
- Von Hogersthal,, G.B.H.
- Grundy, A.J.D.
- Lagoudakis, P.G.
- Baumberg, J.J.
Publication date
August 2007
DOI Publisher
Institution of Engineering and Technology (IET)Abstract
Laser action with low threshold average pump power density (~50 W - cm-2 ) at room temperature is reported for a crack-free planar vertical cavity surface emitting laser (VCSEL) structure based on a bottom lattice-matched AllnN/GaN distributed Bragg reflector (DBR) and a top dielectric DBR. The cavity region, formed by n- and p-type GaN layers surrounding only three InGaN/GaN quantum wells, corresponds to a typical active region suitable for an electrically driven VCSEL. In addition to low threshold, a spontaneous emission coupling factor beta ~ 2 x 10-10 is derived for this ready-to-be-processed laser structure
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