Bending and bundling was observed from vertically aligned arrays of ZnO nanowires with flat (0001) top surfaces, which were synthesized using a vapor-phase method without metal catalysts. Sufficient evidence was found to exclude electron-beam bombardment during scanning electron microscopy as a cause for bending and bundling. We attribute the bending and bundling to electrostatic interactions due to charged (0001) polar surfaces, and also discussed the threshold surface charge densities for the bending and bundling based on a simple cantilever-bending model. Some growth features were indicative of the operation of electrostatic interactions during the growth
Vertically aligned ZnO nanowires (NWs) have a variety of astonishing applications in electronics as ...
We report on the growth of ZnO nanowire (NW) arrays on selected areas by using a vapor phase deposit...
A red shift of the exciton of ZnO nanowires is efficiently produced by bending strain, as demonstrat...
We studied the bending phenomenon of ZnO nanowires (NWs) by using three kinds of sideways physical d...
It is commonly accepted that the control over NW orientation is reached through growth conditions [1...
Ion beams can be used to permanently bend and re-align nanowires after growth. We have irradiated Zn...
International audienceThe bending effect of self-catalyst zinc oxide nanowires on a photoconducting ...
International audienceZnO nanowires are considered as attractive building blocks for piezoelectric d...
We studied the bending phenomenon of ZnO nanowires (NWs) by using three kinds of sideways physical d...
In the vapor-liquid-solid (VLS) growth of 1D nanostructures, the electronic structure of the substra...
Abstract. Controlling the growth of zinc oxide nanowires is necessary to optimize the performances o...
ZnO nanowires were subjected to convergent electron beam irradiation in a 300 kV transmission electr...
To ensure reliability and facilitate the strain engineering of zinc oxide (ZnO) nanowires (NWs), it ...
International audienceThe origin of deflections of semiconductor nanowires (NWs) induced by an elect...
Vertically aligned ZnO nanowires (NWs) have a variety of astonishing applications in electronics as ...
We report on the growth of ZnO nanowire (NW) arrays on selected areas by using a vapor phase deposit...
A red shift of the exciton of ZnO nanowires is efficiently produced by bending strain, as demonstrat...
We studied the bending phenomenon of ZnO nanowires (NWs) by using three kinds of sideways physical d...
It is commonly accepted that the control over NW orientation is reached through growth conditions [1...
Ion beams can be used to permanently bend and re-align nanowires after growth. We have irradiated Zn...
International audienceThe bending effect of self-catalyst zinc oxide nanowires on a photoconducting ...
International audienceZnO nanowires are considered as attractive building blocks for piezoelectric d...
We studied the bending phenomenon of ZnO nanowires (NWs) by using three kinds of sideways physical d...
In the vapor-liquid-solid (VLS) growth of 1D nanostructures, the electronic structure of the substra...
Abstract. Controlling the growth of zinc oxide nanowires is necessary to optimize the performances o...
ZnO nanowires were subjected to convergent electron beam irradiation in a 300 kV transmission electr...
To ensure reliability and facilitate the strain engineering of zinc oxide (ZnO) nanowires (NWs), it ...
International audienceThe origin of deflections of semiconductor nanowires (NWs) induced by an elect...
Vertically aligned ZnO nanowires (NWs) have a variety of astonishing applications in electronics as ...
We report on the growth of ZnO nanowire (NW) arrays on selected areas by using a vapor phase deposit...
A red shift of the exciton of ZnO nanowires is efficiently produced by bending strain, as demonstrat...