A 1D Vanadium Dioxide Nanochannel Constructed via Electric-Field-Induced Ion Transport and its Superior Metal-Insulator Transition

Nanoscale manipulation of materials' physicochemical properties offers distinguished possibility to the development of novel electronic devices with ultrasmall dimension, fast operation speed, and low energy consumption characteristics. This is especially important as the present semiconductor manufacturing technique is approaching the end of miniaturization campaign in the near future. Here, a superior metal-insulator transition (MIT) of a 1D VO2 nanochannel constructed through an electric-field-induced oxygen ion migration process in V2O5 thin film is reported for the first time. A sharp and reliable MIT transition with a steep turn-on voltage slope of <0.5 mV dec(-1), fast switching speed of 17 ns, low energy consumption of 8 pJ, and low variability of