Protonic/electronic hybrid oxide transistor gated by chitosan and its full-swing low voltage inverter applications

Modulation of charge carrier density in condensed materials based on ionic/electronic interaction has attracted much attention. Here, protonic/electronic hybrid indium-zinc-oxide (IZO) transistors gated by chitosan based electrolyte were obtained. The chitosan-based electrolyte illustrates a high proton conductivity and an extremely strong proton gating behavior. The transistor illustrates good electrical performances at a low operating voltage of similar to 1.0V such as on/off ratio of similar to 3 x 10(7), subthreshold swing of similar to 65 mV/dec, threshold voltage of similar to 0.3 V, and mobility of similar to 7 cm(2)/V s. Good positive gate bias stress stabilities are obtained. Furthermore, a low voltage driven resistor-loaded inverter was built by using an IZO transistor in series with a load resistor, exhibiting a linear relationship between the voltage gain and the supplied voltage. The inverter is also used for decreasing noises of input signals. The protonic/electronic hybrid IZO transistors have potential applications in biochemical sensors and portable electronics. (C) 2015 AIP Publishing LLC