An electrically driven mid-infrared solid state modulator

Rutt, Harvey N.
Uppal, Suresh
Lee, Chong Yew

DOI

10.1109/ICIMW.2005.1572518

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Abstract

Detailed device fabrication and operation modelling has been undertaken for a mid-infrared, 8-14µm band modulator based on a high purity Germanium p-i-n diode. The results show the crucial importance of optimising material properties and dopant concentrations and profiles for optimum device performance. Preliminary experimental results will be presented

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An electrically driven mid-infrared solid state modulator

Abstract

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An electrically driven mid-infrared solid state modulator

Abstract

Extracted data

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