New generation of resistance thermometers based on Ge films on GaAs substrates
- Boltovets, N.S.
- Dugaev, V.K
- Kholevchuk, V.V
- McDonald, P.C
- Mitin, V.F
- Nemish, I.Yu
- Pavese, F
- Sorokin, P.V.
- Soloviev, E.A
- Venger, E.F
DOIAbstract
Recent results in the development of resistance thermometers based on germanium films on gallium arsenide are summarized. Preliminary results in the development of a new generation of radiation-resistant thermometers and multifunction sensors intended for use in the range 0.03 to 500 K in the presence of high magnetic fields are discussed. These sensors have been produced in an international collaboration recently funded through the EU INTAS program
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