Add to ORKGNMOS processes require a variety of threshold voltages for differing applications. For this experiment, the threshold voltages of NMOS devices were altered by a using several different ion implant doses (none, 1, 2, 4, and 8e12/cm2) of boron. This shifted the threshold voltage in good agreement with literature values [1]
AbstractThe effects of channel doping and temperature dependence on the BSIM3 threshold voltage mode...
While the debate about the exact cause of Fermi level pinning in metal-high-k dielectric gate stacks...
PMOS devices with and without nitrogen implant into the gate electrode before doping with boron and ...
NMOS processes require a variety of threshold voltages for differing applications. For this experime...
This paper reports on the threshold adjustment of NMOS transistors by arsenic ion implantation in th...
[[abstract]]Threshold adjustments have been performed on n- and p-channel metal-oxide-semiconductor ...
[[abstract]]© 1988 Elsevier-Incremental threshold voltage controls were achieved for n-channel and p...
With the replacement of traditional polysilicon and silicon dioxide by metal gates and high-k dielec...
A shift of the threshold voltage (V th ) in high voltage metal-oxide-semiconductor field effect tran...
In this study, Taguchi method was used to optimize the influence of process parameter variations on ...
One of the main issues for the simulation of MOS transistors is the correct prediction of threshold ...
A review of the principal features of ion implanted transistors is presented. A detailed analysis of...
In this work, we studied on the boron-ions implantation, including the implant dose and post-anneali...
The pMOS-RADFET (radiation field-effect transistor) as a microdosimeter has been widely applied in s...
The pMOS-RADFET (radiation field-effect transistor) as a microdosimeter has been widely applied in s...
AbstractThe effects of channel doping and temperature dependence on the BSIM3 threshold voltage mode...
While the debate about the exact cause of Fermi level pinning in metal-high-k dielectric gate stacks...
PMOS devices with and without nitrogen implant into the gate electrode before doping with boron and ...
NMOS processes require a variety of threshold voltages for differing applications. For this experime...
This paper reports on the threshold adjustment of NMOS transistors by arsenic ion implantation in th...
[[abstract]]Threshold adjustments have been performed on n- and p-channel metal-oxide-semiconductor ...
[[abstract]]© 1988 Elsevier-Incremental threshold voltage controls were achieved for n-channel and p...
With the replacement of traditional polysilicon and silicon dioxide by metal gates and high-k dielec...
A shift of the threshold voltage (V th ) in high voltage metal-oxide-semiconductor field effect tran...
In this study, Taguchi method was used to optimize the influence of process parameter variations on ...
One of the main issues for the simulation of MOS transistors is the correct prediction of threshold ...
A review of the principal features of ion implanted transistors is presented. A detailed analysis of...
In this work, we studied on the boron-ions implantation, including the implant dose and post-anneali...
The pMOS-RADFET (radiation field-effect transistor) as a microdosimeter has been widely applied in s...
The pMOS-RADFET (radiation field-effect transistor) as a microdosimeter has been widely applied in s...
AbstractThe effects of channel doping and temperature dependence on the BSIM3 threshold voltage mode...
While the debate about the exact cause of Fermi level pinning in metal-high-k dielectric gate stacks...
PMOS devices with and without nitrogen implant into the gate electrode before doping with boron and ...