This study reveals the effect of nanoscale ITO transmission gratings on light emission from the top, sides, and bottom of a GaN light-emitting diode (LED), based on the substrate standing wave analysis. First, we show that sapphire substrate thickness affects the standing wave pattern in the LED and find the best- and worst-case sapphire thicknesses. Second, we find that adding nanoscale ITO transmission gratings can improve light extraction by 222% or 253%, depending on the reference chosen. Third, we observe that maximizing top light emission with the nano-grating can significantly reduce bottom and side light emissions. Finally, we study grating performance over different wavelengths and generate the LED spectrum
An anodic aluminum oxide (AAO) patterned sapphire substrate, with the lattice constant of 520 +/- 40...
The Gallium Nitride (GaN) Light-Emitting-Diode (LED) bottom refection grating simulation and results...
GaN-based nanowires hold great promise for solid state lighting applications because of their wavegu...
This study reveals the effect of nanoscale ITO transmission gratings on light emission from the top,...
We study nano-scale ITO top transmission gratings to improve light extraction efficiency (LEE). We u...
In this paper, we use a Finite-Difference Time-Domain GaN LED model to study constant wave (CW) aver...
Today's advanced technology allows engineers to fabricate GaN LEDs with various heights, widths...
We study nano-grated surface GaN LED to improve light extraction efficiency by optimizing the device...
We present simulation results of the indium tin oxide (ITO) top diffraction grating using a rigorous...
We present a grating model of two-dimensional (2D) rigorous coupled wave analysis (RCWA) to study to...
We present simulation results of the indium tin oxide (ITO) top diffraction grating using a rigorous...
We study the top transmission grating's improvement on GaN LED light extraction efficiency. We ...
This is a study regarding nano-grating structure location of GaN LEDs. A 2D model of a nano-grating ...
GaN-based light-emitting diodes (LEDs) with an emitting wavelength of 450 nm were grown on nano-patt...
An improvement of light extraction from GaN-based light-emitting diodes (LEDs) was demonstrated by f...
An anodic aluminum oxide (AAO) patterned sapphire substrate, with the lattice constant of 520 +/- 40...
The Gallium Nitride (GaN) Light-Emitting-Diode (LED) bottom refection grating simulation and results...
GaN-based nanowires hold great promise for solid state lighting applications because of their wavegu...
This study reveals the effect of nanoscale ITO transmission gratings on light emission from the top,...
We study nano-scale ITO top transmission gratings to improve light extraction efficiency (LEE). We u...
In this paper, we use a Finite-Difference Time-Domain GaN LED model to study constant wave (CW) aver...
Today's advanced technology allows engineers to fabricate GaN LEDs with various heights, widths...
We study nano-grated surface GaN LED to improve light extraction efficiency by optimizing the device...
We present simulation results of the indium tin oxide (ITO) top diffraction grating using a rigorous...
We present a grating model of two-dimensional (2D) rigorous coupled wave analysis (RCWA) to study to...
We present simulation results of the indium tin oxide (ITO) top diffraction grating using a rigorous...
We study the top transmission grating's improvement on GaN LED light extraction efficiency. We ...
This is a study regarding nano-grating structure location of GaN LEDs. A 2D model of a nano-grating ...
GaN-based light-emitting diodes (LEDs) with an emitting wavelength of 450 nm were grown on nano-patt...
An improvement of light extraction from GaN-based light-emitting diodes (LEDs) was demonstrated by f...
An anodic aluminum oxide (AAO) patterned sapphire substrate, with the lattice constant of 520 +/- 40...
The Gallium Nitride (GaN) Light-Emitting-Diode (LED) bottom refection grating simulation and results...
GaN-based nanowires hold great promise for solid state lighting applications because of their wavegu...