Ta2O5 films were deposited by conventional electron beam evaporation method and then annealed in air at different temperature from 873 to 1273 K. It was found that the film structure changed from amorphous phase to hexagonal phase when annealed at 1073 K, then transformed to orthorhombic phase after annealed at 1273 K. The transmittance was improved after annealed at 873 K, and it decreased as the annealing temperature increased further. The total integrated scattering (TIS) tests and AFM results showed that both scattering and root mean square (RMS) roughness of films increased with the annealing temperature increasing. X-ray photoelectron spectroscopy (XPS) analysis showed that the film obtained better stoichiometry and the O/Ta ratio inc...
A series or Ta2O5 films with different SiO2 additional layers including overcoat, undercoat and inte...
The change in the thickness and chemical states of the interfacial layer and the related electrical ...
Tantalum pentoxide (Ta2O5) thin films (20-50 nm) have been grown by 1064 nm Nd:YAG laser oxidation o...
Ta2O5 films were deposited using the conventional electron beam evaporation method and then annealed...
Ta2O5 films are prepared on Si, BK7, fused silica, antireflection (AR) and high reflector (HR) subst...
Ta2O5 films are deposited on fused silica substrates by conventional electron beam evaporation metho...
Ta2O5 films deposited by ion beam sputtering were post-treated with different methods. The optical p...
Optical coatings deposited by the dual ion beam sputtering (DIBS) method usually show high compressi...
Optical coatings deposited by the dual ion beam sputtering (DIBS) method usually show high compressi...
We investigate the effect of post-deposition annealing (for temperatures from 848 K to 1273 K) on th...
We investigate the effect of post-deposition annealing (for temperatures from 848 K to 1273 K) on th...
Ta2O5 films were prepared by electron beam evaporation under different oxygen partial pressures. Thr...
Ta2O5 films were made by metal organic chemical vapor deposition (MOCVD) and annealed at various tem...
Tantalum oxide (TaOx) films were deposited by KrF excimer laser ablation of Ta2O5 targets in an oxyg...
High laser-induced damage threshold (LIDT)Ta2O5 films were prepared by the sol-gel method using TaCl...
A series or Ta2O5 films with different SiO2 additional layers including overcoat, undercoat and inte...
The change in the thickness and chemical states of the interfacial layer and the related electrical ...
Tantalum pentoxide (Ta2O5) thin films (20-50 nm) have been grown by 1064 nm Nd:YAG laser oxidation o...
Ta2O5 films were deposited using the conventional electron beam evaporation method and then annealed...
Ta2O5 films are prepared on Si, BK7, fused silica, antireflection (AR) and high reflector (HR) subst...
Ta2O5 films are deposited on fused silica substrates by conventional electron beam evaporation metho...
Ta2O5 films deposited by ion beam sputtering were post-treated with different methods. The optical p...
Optical coatings deposited by the dual ion beam sputtering (DIBS) method usually show high compressi...
Optical coatings deposited by the dual ion beam sputtering (DIBS) method usually show high compressi...
We investigate the effect of post-deposition annealing (for temperatures from 848 K to 1273 K) on th...
We investigate the effect of post-deposition annealing (for temperatures from 848 K to 1273 K) on th...
Ta2O5 films were prepared by electron beam evaporation under different oxygen partial pressures. Thr...
Ta2O5 films were made by metal organic chemical vapor deposition (MOCVD) and annealed at various tem...
Tantalum oxide (TaOx) films were deposited by KrF excimer laser ablation of Ta2O5 targets in an oxyg...
High laser-induced damage threshold (LIDT)Ta2O5 films were prepared by the sol-gel method using TaCl...
A series or Ta2O5 films with different SiO2 additional layers including overcoat, undercoat and inte...
The change in the thickness and chemical states of the interfacial layer and the related electrical ...
Tantalum pentoxide (Ta2O5) thin films (20-50 nm) have been grown by 1064 nm Nd:YAG laser oxidation o...