The excess noise factor (ENF) of a large area avalanche photodiode was measured as a function of gain for different temperatures, in the -40 to 27°C range. Results show that ENF does not depend significantly with temperature attaining values of about 1.8 and 2.3 for gains of 50 and 300, respectively.http://www.sciencedirect.com/science/article/B6TJM-4CMMX05-D/1/34a0ba40f32ddab67adeb9313913fec
This paper presents the electron and hole avalanche multiplication and excess noise characteristics ...
Abstract-Approximate analytical expressions are derived for the mean gain and the excess noise facto...
The room-temperature response of large-area avalanche photodiodes (LAAPDs) to 128- and 172-nm light ...
The excess noise factor (ENF) of a large area avalanche photodiode was measured as a function of gai...
A Large Area Avalanche Photodiode was studied, aiming to access its performance as light detector at...
Simple, approximate formulas are developed to calculate the mean gain and excess noise factor for av...
The response of a Peltier-cooled large-area avalanche photodiode to VUV-light is investigated as a f...
Simple, approximate formulas are developed to calculate the mean gain and excess noise factor for av...
An experimental apparatus for carrying out electrical noise measurements on various semiconductor de...
The avalanche noise characteristics of Al0.8Ga0.2 As have been measured in a range of p-i-n and n-i-...
This work aims at investigating the avalanche excess noise characteristics of the AlxGa1-xInP (x fro...
A system for measuring, with reduced photocurrent, the excess noise associated with the gain in aval...
Measurements of the avalanche multiplication noise in InAs p-i-n and n-i-p diodes at room temperatur...
An extremely low noise Separate Absorption and Multiplication Avalanche Photodiode (SAM-APD), consis...
Avalanche photodiodes (APDs) are used in optical receivers of high-speed optical communication syste...
This paper presents the electron and hole avalanche multiplication and excess noise characteristics ...
Abstract-Approximate analytical expressions are derived for the mean gain and the excess noise facto...
The room-temperature response of large-area avalanche photodiodes (LAAPDs) to 128- and 172-nm light ...
The excess noise factor (ENF) of a large area avalanche photodiode was measured as a function of gai...
A Large Area Avalanche Photodiode was studied, aiming to access its performance as light detector at...
Simple, approximate formulas are developed to calculate the mean gain and excess noise factor for av...
The response of a Peltier-cooled large-area avalanche photodiode to VUV-light is investigated as a f...
Simple, approximate formulas are developed to calculate the mean gain and excess noise factor for av...
An experimental apparatus for carrying out electrical noise measurements on various semiconductor de...
The avalanche noise characteristics of Al0.8Ga0.2 As have been measured in a range of p-i-n and n-i-...
This work aims at investigating the avalanche excess noise characteristics of the AlxGa1-xInP (x fro...
A system for measuring, with reduced photocurrent, the excess noise associated with the gain in aval...
Measurements of the avalanche multiplication noise in InAs p-i-n and n-i-p diodes at room temperatur...
An extremely low noise Separate Absorption and Multiplication Avalanche Photodiode (SAM-APD), consis...
Avalanche photodiodes (APDs) are used in optical receivers of high-speed optical communication syste...
This paper presents the electron and hole avalanche multiplication and excess noise characteristics ...
Abstract-Approximate analytical expressions are derived for the mean gain and the excess noise facto...
The room-temperature response of large-area avalanche photodiodes (LAAPDs) to 128- and 172-nm light ...