Multifunction properties of GaAs and other III-V semi-insulating crystals could be expanded by the artificial decreasing of their electric response symmetry that could be transformed from piezo- into a pyroelectric class. Artificial pyroelectricity of III-V type semiconductors forms a basis for one-crystal pyroelectric sensor. The voltage sensitivity of GaAs (111)-cut is the similar to PZT pyroelectric ceramics, so GaAs wafer could be used as a thermal-to-electric transducer in a new microelectronic device named pyrotransistor. The last is uncooling far infrared (IR) detector based on MESFET technology
x, 102, [7] leaves : ill. ; 30 cm.PolyU Library Call No.: [THS] LG51 .H577M AP 2002 FungThe aim of t...
The photodetectors operating in the 0.8-20ćm wavelength region have been prepared. The report is dev...
Pyroelectric and dielectric properties of modified PZT and PZ have been studied for their use in inf...
Multifunction properties of GaAs and other III-V semi-insulating crystals could be expanded by the a...
GaAs is a material exhibiting the most promise for microwave microelectronics. This work shows that...
One of important problems of recent electronics is non-cooled pyroelectric and piezoelectric sensors...
Under the anisotropy of boundary conditions, a high-gap III-V semiconductor indicates behavior of py...
The physics and applications of pyroelectricity are explored. A brief history as well as relevant s...
Pyroelectrics form a very broad class of materials. Any material which has a crystal structure posse...
AbstractThis paper describes a new method to increase the responsivity of pyroelectric IR sensors in...
Basically new induced poiar dielectric media with controlled polarization properties and possessing ...
In this thesis, micromachined pyroelectric infrared detectors based on a novel PZT/PT multilayer fer...
cited By 2International audienceWe deal with the thermal energy which is one of the ambient energy s...
Electronic devices are shrinking in size and new materials, for example gallium nitride (GaN) are b...
Electronic devices are shrinking in size and new materials, for example gallium nitride (GaN) are b...
x, 102, [7] leaves : ill. ; 30 cm.PolyU Library Call No.: [THS] LG51 .H577M AP 2002 FungThe aim of t...
The photodetectors operating in the 0.8-20ćm wavelength region have been prepared. The report is dev...
Pyroelectric and dielectric properties of modified PZT and PZ have been studied for their use in inf...
Multifunction properties of GaAs and other III-V semi-insulating crystals could be expanded by the a...
GaAs is a material exhibiting the most promise for microwave microelectronics. This work shows that...
One of important problems of recent electronics is non-cooled pyroelectric and piezoelectric sensors...
Under the anisotropy of boundary conditions, a high-gap III-V semiconductor indicates behavior of py...
The physics and applications of pyroelectricity are explored. A brief history as well as relevant s...
Pyroelectrics form a very broad class of materials. Any material which has a crystal structure posse...
AbstractThis paper describes a new method to increase the responsivity of pyroelectric IR sensors in...
Basically new induced poiar dielectric media with controlled polarization properties and possessing ...
In this thesis, micromachined pyroelectric infrared detectors based on a novel PZT/PT multilayer fer...
cited By 2International audienceWe deal with the thermal energy which is one of the ambient energy s...
Electronic devices are shrinking in size and new materials, for example gallium nitride (GaN) are b...
Electronic devices are shrinking in size and new materials, for example gallium nitride (GaN) are b...
x, 102, [7] leaves : ill. ; 30 cm.PolyU Library Call No.: [THS] LG51 .H577M AP 2002 FungThe aim of t...
The photodetectors operating in the 0.8-20ćm wavelength region have been prepared. The report is dev...
Pyroelectric and dielectric properties of modified PZT and PZ have been studied for their use in inf...