GaAs components in MESFET, HEMT and HBT technology are a valuable supplement to traditional Si RF technologies and cover 15 to 20% of all RF applications. Their major application potential is in power amplifiers for mobile communication as well as WLAN and WLL transceiver circuits. Moreover, at MMW frequencies new applications like radio links, SATCOM and car distance radar support the introduction of GaAs hetero devices. Production quantities of about 100 million pcs and annual growth rates of about 30% clearly require large volume production strategies and cost positions well-known from Si counterparts
117 p.In this work, high performance GaAs-based power HBT technology is developed. The devices fabri...
AbstractAs we noted in the previous article in this series, unlike digital, the analog GaAs IC indus...
ABSTRACT — The paper presents an overview on the European status of electronic devices for micro- an...
GaAs components in MESFET, HEMT and HBT technology are a valuable supplement to traditional Si RF te...
GaAs technologies have seen broad acceptance for low power (<1W), cellular handset RF power ampli...
GaAs has enjoyed a relatively unchallenged position as the RF semiconductor material of choice for m...
GaAs MESFETs have traditionally been the preferred technology for most RFIC applications. The past f...
Over the next five years, analog GaAs semiconductor suppliers participating in emerging wireless app...
A duet of papers given at Compound Semiconductor Mantech in New Orleans starts with RF Micro Devices...
A duet of papers given at Compound Semiconductor Mantech in New Orleans starts with RF Micro Devices...
By far the single largest application for GaAs RFICs in commercial/consumer platforms is in mobile t...
AbstractA significant part of the European Microwave week held in Munich last October was the event ...
SiGe HBT's and Si CMOS continue to capture more and more of the handheld wireless communication...
AbstractDespite any slowdown the GaAs sector, the 2001 GaAs MANTECH International Conference on Comp...
To learn more about designing analog integrated circuits (ICs) at microwave frequencies using GaAs m...
117 p.In this work, high performance GaAs-based power HBT technology is developed. The devices fabri...
AbstractAs we noted in the previous article in this series, unlike digital, the analog GaAs IC indus...
ABSTRACT — The paper presents an overview on the European status of electronic devices for micro- an...
GaAs components in MESFET, HEMT and HBT technology are a valuable supplement to traditional Si RF te...
GaAs technologies have seen broad acceptance for low power (<1W), cellular handset RF power ampli...
GaAs has enjoyed a relatively unchallenged position as the RF semiconductor material of choice for m...
GaAs MESFETs have traditionally been the preferred technology for most RFIC applications. The past f...
Over the next five years, analog GaAs semiconductor suppliers participating in emerging wireless app...
A duet of papers given at Compound Semiconductor Mantech in New Orleans starts with RF Micro Devices...
A duet of papers given at Compound Semiconductor Mantech in New Orleans starts with RF Micro Devices...
By far the single largest application for GaAs RFICs in commercial/consumer platforms is in mobile t...
AbstractA significant part of the European Microwave week held in Munich last October was the event ...
SiGe HBT's and Si CMOS continue to capture more and more of the handheld wireless communication...
AbstractDespite any slowdown the GaAs sector, the 2001 GaAs MANTECH International Conference on Comp...
To learn more about designing analog integrated circuits (ICs) at microwave frequencies using GaAs m...
117 p.In this work, high performance GaAs-based power HBT technology is developed. The devices fabri...
AbstractAs we noted in the previous article in this series, unlike digital, the analog GaAs IC indus...
ABSTRACT — The paper presents an overview on the European status of electronic devices for micro- an...