This contribution presents a new set of digital ICs dedicated to optical fibre links, realised using a qualified GaAs P-HEMT technology with 0.25 um gate length. The ICs include 2:1 selectors, 1:2 DEMUXes, D-flip-flops, dividers by 2, operating at bit-rates up to 40 Gb/s. Applications include high speed optical fibre systems. These circuits may also be considered as basic building blocks for future higher complexity digital functions
Abstract — This paper presents 40-Gbit/s time division mul-tiplexing (TDM) transmission technologies...
A GaAs gate array family is fabricated with Thomson Composants Microondes Self Aligned Gallium Arsen...
During the past five years numerous mixed signal integrated circuits (IC's) have been designed, proc...
Using our 0.2 mu m AlGaAs/GaAs/AlGaAs quantum well HEMT technology, we have designed, manufactured a...
Cette thèse est une contribution aux méthodes de conception et de caractérisation des circuits à trè...
A decision IC for optical data links at bit rates of 20-40 Gbit/s has been realised by using 0.2mu m...
Within the scope of the project a complete chip set [1] for optoelectronic 40 Gbit/s ETDM data trans...
A set of ICs has been developed for high-speed data links at data rates above 10 Gbit/s. A recessed ...
As tele- and data-communications develop rapidly, optic-fiber networks are widely implemented and th...
Using our 0.2 mu m AlGaAs/GaAs/AlGaAs quantum well HEMT technology, we have designed a chip set for ...
HEMT devices exhibit excellent figures of merit for high frequency operation. Therefore they are str...
Abstract- We have developed a number of products for 40 Gbps applications, including InP-based monol...
A high speed modulator driver has been developed and realised using GaAs P-HEMT technology. The driv...
In this paper we present two ICs fabricated in InP DHBT technology and devoted to 43 Gbit/s and over...
Research and development of InP--based transistors and integrated circuits (ICs)are driven by applic...
Abstract — This paper presents 40-Gbit/s time division mul-tiplexing (TDM) transmission technologies...
A GaAs gate array family is fabricated with Thomson Composants Microondes Self Aligned Gallium Arsen...
During the past five years numerous mixed signal integrated circuits (IC's) have been designed, proc...
Using our 0.2 mu m AlGaAs/GaAs/AlGaAs quantum well HEMT technology, we have designed, manufactured a...
Cette thèse est une contribution aux méthodes de conception et de caractérisation des circuits à trè...
A decision IC for optical data links at bit rates of 20-40 Gbit/s has been realised by using 0.2mu m...
Within the scope of the project a complete chip set [1] for optoelectronic 40 Gbit/s ETDM data trans...
A set of ICs has been developed for high-speed data links at data rates above 10 Gbit/s. A recessed ...
As tele- and data-communications develop rapidly, optic-fiber networks are widely implemented and th...
Using our 0.2 mu m AlGaAs/GaAs/AlGaAs quantum well HEMT technology, we have designed a chip set for ...
HEMT devices exhibit excellent figures of merit for high frequency operation. Therefore they are str...
Abstract- We have developed a number of products for 40 Gbps applications, including InP-based monol...
A high speed modulator driver has been developed and realised using GaAs P-HEMT technology. The driv...
In this paper we present two ICs fabricated in InP DHBT technology and devoted to 43 Gbit/s and over...
Research and development of InP--based transistors and integrated circuits (ICs)are driven by applic...
Abstract — This paper presents 40-Gbit/s time division mul-tiplexing (TDM) transmission technologies...
A GaAs gate array family is fabricated with Thomson Composants Microondes Self Aligned Gallium Arsen...
During the past five years numerous mixed signal integrated circuits (IC's) have been designed, proc...