A new HBT current source model and the corresponding direct parameter extraction methods are presented. Exact analytical expressions for the current source model parameter are derived. This method is applied to scalable modeling of HBT. Some techniques to reduce redundancy of the parameters are introduced. The model based on this method can accurately predict the measured data for the change of ambient temperature, size, and bias
This paper describes the dynamic of the current collapse phenomenon that can occur in a multifinger ...
The variation and stability of HBT’s parameters at different temperatures are important for utilizin...
In this paper the applicability of the VBIC95 model for consistent modeling of SiGe HBT devices is ...
A new HBT current source model and the corresponding direct parameter extraction methods are present...
A new practical technique for estimating the junction temperature and the thermal resistance of an H...
A compact and robust InGaP-GaAs HBT model has been developed for accurate large-signal and linearity...
This paper presents a practical method of extracting the bias dependent parameters of the forward tr...
A physical basis for large-signal HBT modeling was established in terms of transit times using a Mon...
Abstract- New analytical expressions for the dynamic resistance, transconductance, base-collector in...
Large-signal modeling results of SiGe HBTs with HICUM (High Current Transistor Model)are presented.M...
This paper presents an equivalent circuit model for common-emitter current-gain collapse in multi-fi...
A new large signal electrothermal Heterojunction Bipolar Transistor (HBT) model with original parame...
A physics-based multicell electrothermal equivalent circuit model is described that is applied to th...
Thermal-impedance models of single-finger and multifinger InGaP/GaAs heterojunction bipolar transist...
Abstract — Large parasitic series resistances of heterojunction bipolar transistor (HBT) are shown t...
This paper describes the dynamic of the current collapse phenomenon that can occur in a multifinger ...
The variation and stability of HBT’s parameters at different temperatures are important for utilizin...
In this paper the applicability of the VBIC95 model for consistent modeling of SiGe HBT devices is ...
A new HBT current source model and the corresponding direct parameter extraction methods are present...
A new practical technique for estimating the junction temperature and the thermal resistance of an H...
A compact and robust InGaP-GaAs HBT model has been developed for accurate large-signal and linearity...
This paper presents a practical method of extracting the bias dependent parameters of the forward tr...
A physical basis for large-signal HBT modeling was established in terms of transit times using a Mon...
Abstract- New analytical expressions for the dynamic resistance, transconductance, base-collector in...
Large-signal modeling results of SiGe HBTs with HICUM (High Current Transistor Model)are presented.M...
This paper presents an equivalent circuit model for common-emitter current-gain collapse in multi-fi...
A new large signal electrothermal Heterojunction Bipolar Transistor (HBT) model with original parame...
A physics-based multicell electrothermal equivalent circuit model is described that is applied to th...
Thermal-impedance models of single-finger and multifinger InGaP/GaAs heterojunction bipolar transist...
Abstract — Large parasitic series resistances of heterojunction bipolar transistor (HBT) are shown t...
This paper describes the dynamic of the current collapse phenomenon that can occur in a multifinger ...
The variation and stability of HBT’s parameters at different temperatures are important for utilizin...
In this paper the applicability of the VBIC95 model for consistent modeling of SiGe HBT devices is ...