Noise, Large-Signal Modeling and Characterization of InP/InGaAs HBTs
- Lal, N.
- Nuttinck, S.
- Raghavan, A.
- Gebara, E.
- Venkataraman, S.
- Papapolymerou, J.
- Laskar, J.
DOIAbstract
We developed a robust large-signal model for InP/InGaAs HBTs. DC, small-signal, noise and power characteristics of InP/InGaAs HBTs are measured over a wide range of frequencies and bias conditions. A minimum noise figure (FMIN) of 3.5dB, and a gain of 16.8dB are achieved at 10-GHz. These measurement results are the basis for robust nonlinear models of InP/InGaAs HBT devices
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