Quasi-continuous-wave operation of GaAs/AlGaAs quantum-cascade lasers with high average optical power is demonstrated. Double X-ray diffraction has been used to investigate the quality of the epitaxial material. The compositional gradients and the interface quality are controlled effectively. The corrected average power of per facet about 17 mW and temperature tuning coefficient of the gain peak about 0.91 nm/K from 83 K to 140 K is achieved in pulse operation. Best value of threshold current density is less than 3.0 kA/cm(2) at 83 K. (C) 2005 Elsevier Ltd. All rights reserved
We develop 5.5-mu m InxGa1-xAs/InyAl1-yAs strain-compensated quantum cascade lasers with InP and InG...
The preparation and main characteristics of the InGaAs/InAlAs quantum cascade laser were given. The ...
In this work, we demonstrate the features of a two-stage epitaxial growth technique and show the res...
We report on the realization of GaAs/AlGaAs quantum cascade lasers with an emission wavelength of 9....
The growth and characterization of quantum cascade (QC) lasers based on InGaAs/InAlAs material syste...
Quasi-continuous-wave operation of AlGaAs/GaAs-based quantum cascade lasers (lambda similar to 9 mu ...
Quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As/InyAl(1-y)As grown on InP subst...
X-ray diffraction, as an effective probe and simple method, is used to ascertain the precise control...
The fabrication technology of AlGaAs/GaAs based quantum cascade lasers is reported. The devices oper...
Quantum cascade (QC) lasers are a fundamentally new semiconductor laser source designed by methods o...
We report on the realization of quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As...
High material quality is the basis of quantum cascade lasers (QCLs). Here we report the solid source...
Quantum Cascade Lasers are a novel semiconductor light source with the unique property of wavelength...
By optimizing the molecule beam epitaxy growth condition, the quality of quantum cascade (QC) materi...
Multi-watt continuous-wave room temperature operation with efficiency exceeding 10% has been demonst...
We develop 5.5-mu m InxGa1-xAs/InyAl1-yAs strain-compensated quantum cascade lasers with InP and InG...
The preparation and main characteristics of the InGaAs/InAlAs quantum cascade laser were given. The ...
In this work, we demonstrate the features of a two-stage epitaxial growth technique and show the res...
We report on the realization of GaAs/AlGaAs quantum cascade lasers with an emission wavelength of 9....
The growth and characterization of quantum cascade (QC) lasers based on InGaAs/InAlAs material syste...
Quasi-continuous-wave operation of AlGaAs/GaAs-based quantum cascade lasers (lambda similar to 9 mu ...
Quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As/InyAl(1-y)As grown on InP subst...
X-ray diffraction, as an effective probe and simple method, is used to ascertain the precise control...
The fabrication technology of AlGaAs/GaAs based quantum cascade lasers is reported. The devices oper...
Quantum cascade (QC) lasers are a fundamentally new semiconductor laser source designed by methods o...
We report on the realization of quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As...
High material quality is the basis of quantum cascade lasers (QCLs). Here we report the solid source...
Quantum Cascade Lasers are a novel semiconductor light source with the unique property of wavelength...
By optimizing the molecule beam epitaxy growth condition, the quality of quantum cascade (QC) materi...
Multi-watt continuous-wave room temperature operation with efficiency exceeding 10% has been demonst...
We develop 5.5-mu m InxGa1-xAs/InyAl1-yAs strain-compensated quantum cascade lasers with InP and InG...
The preparation and main characteristics of the InGaAs/InAlAs quantum cascade laser were given. The ...
In this work, we demonstrate the features of a two-stage epitaxial growth technique and show the res...