Effective monolithic integration strategies for high quality quantum III-V nanostructure fabrication on Si will be introduced. The methodologies presented range from ultrathin planar Ge virtual substrates for the integration of single photon emitters with high temperature stability to advanced three-dimensional Ge growths strategies
The majority of current semiconductor technologies are built on Si (100), such as the CMOS technolog...
International audienceVertical III−V nanowires are of great interest for a large number of applicati...
Yves Guldner, président du jury Philippe Boucaud, rapporteur Georges Brémond, rapporteur Daniel Bens...
Effective monolithic integration strategies for high quality quantum III-V nanostructure fabrication...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2...
International audienceThe integration of III-V semiconductor nanowires on Si for nanoelectronics or ...
Depuis plus de 30ans, les chercheurs essaient de combiner le silicium et le GaAs. Le potentiel de l'...
The heterogeneous integration of optoelectronic and electronic circuits is poised to transform perso...
A research synopsis is presented summarizing work with integration of Ge and III-V semiconductors an...
We present the nanoheteroepitaxial growth of gallium arsenide (GaAs) on nano-patterned silicon (Si) ...
Hybrid silicon nanowires with an integrated light-emitting segment can significantly advance nanoele...
We summarize our work on creating substrate platforms, processes, and devices for the monolithic int...
We present results of ideal epitaxial nucleation and growth of III-V semiconductor nanowires on sili...
The integration of optically active III–V and electronic-suitable IV materials on the same nanowire ...
While Silicon remains the dominant material today in matured very-large-scale-integration technology...
The majority of current semiconductor technologies are built on Si (100), such as the CMOS technolog...
International audienceVertical III−V nanowires are of great interest for a large number of applicati...
Yves Guldner, président du jury Philippe Boucaud, rapporteur Georges Brémond, rapporteur Daniel Bens...
Effective monolithic integration strategies for high quality quantum III-V nanostructure fabrication...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2...
International audienceThe integration of III-V semiconductor nanowires on Si for nanoelectronics or ...
Depuis plus de 30ans, les chercheurs essaient de combiner le silicium et le GaAs. Le potentiel de l'...
The heterogeneous integration of optoelectronic and electronic circuits is poised to transform perso...
A research synopsis is presented summarizing work with integration of Ge and III-V semiconductors an...
We present the nanoheteroepitaxial growth of gallium arsenide (GaAs) on nano-patterned silicon (Si) ...
Hybrid silicon nanowires with an integrated light-emitting segment can significantly advance nanoele...
We summarize our work on creating substrate platforms, processes, and devices for the monolithic int...
We present results of ideal epitaxial nucleation and growth of III-V semiconductor nanowires on sili...
The integration of optically active III–V and electronic-suitable IV materials on the same nanowire ...
While Silicon remains the dominant material today in matured very-large-scale-integration technology...
The majority of current semiconductor technologies are built on Si (100), such as the CMOS technolog...
International audienceVertical III−V nanowires are of great interest for a large number of applicati...
Yves Guldner, président du jury Philippe Boucaud, rapporteur Georges Brémond, rapporteur Daniel Bens...