Add to ORKGWe describe space-time evolution of electric charge induced in dielectric layer of simulated metal-insulator-semiconductor structures due to irradiation with X-rays. The system of equations used as a basis of the simulation model is solved iteratively by efficient numerical method. The obtained simulation results correlate well with the respective data presented in other scientific publications
abstract: The increased use of commercial complementary metal-oxide-semiconductor (CMOS) technologie...
A stochastic model of gamma-ray radiation effects on the density of the induced charge in silicon d...
The model, which confirms that the interaction of trapped positive charges ((hydrogenous species)) i...
We describe space-time evolution of electric charge induced in dielectric layer of simulated metal-i...
The space-time evolution of electric charge induced in the dielectric layer of simulated metal-insul...
The spacetime evolution of electric charge induced in the dielectric layer of simulated metalinsulat...
We have developed a time-dependent two-dimensional simulator in order to simulate charge trapping in...
The authors have developed a time-dependent two-dimensional simulator in order to simulate charge tr...
The one-dimensional Poisson, continuity, and the trap rate equations are solved numerically to study...
This paper deals with the effects of X-ray radiation (7 Mrad (Si) dose) on the ele...
Finite Elements Method simulations of Total Ionizing Dose in two state-of-the-art transistor nodes a...
MOS devices are susceptible to damage by ionizing radiation due to charge buildup in gate, field and...
We have studied electrical defects of $\langle 100\rangle$ Si-SiO$_2$, interface created by gamma ra...
The total dose effect of 60Co gamma-irradiation on MOS (metal-oxide-semiconductor) structure of Al/S...
Device simulation is an important design tool for device structure and technology design. Traditiona...
abstract: The increased use of commercial complementary metal-oxide-semiconductor (CMOS) technologie...
A stochastic model of gamma-ray radiation effects on the density of the induced charge in silicon d...
The model, which confirms that the interaction of trapped positive charges ((hydrogenous species)) i...
We describe space-time evolution of electric charge induced in dielectric layer of simulated metal-i...
The space-time evolution of electric charge induced in the dielectric layer of simulated metal-insul...
The spacetime evolution of electric charge induced in the dielectric layer of simulated metalinsulat...
We have developed a time-dependent two-dimensional simulator in order to simulate charge trapping in...
The authors have developed a time-dependent two-dimensional simulator in order to simulate charge tr...
The one-dimensional Poisson, continuity, and the trap rate equations are solved numerically to study...
This paper deals with the effects of X-ray radiation (7 Mrad (Si) dose) on the ele...
Finite Elements Method simulations of Total Ionizing Dose in two state-of-the-art transistor nodes a...
MOS devices are susceptible to damage by ionizing radiation due to charge buildup in gate, field and...
We have studied electrical defects of $\langle 100\rangle$ Si-SiO$_2$, interface created by gamma ra...
The total dose effect of 60Co gamma-irradiation on MOS (metal-oxide-semiconductor) structure of Al/S...
Device simulation is an important design tool for device structure and technology design. Traditiona...
abstract: The increased use of commercial complementary metal-oxide-semiconductor (CMOS) technologie...
A stochastic model of gamma-ray radiation effects on the density of the induced charge in silicon d...
The model, which confirms that the interaction of trapped positive charges ((hydrogenous species)) i...