Preparation and Characterization of NiO Thin Films by DC Reactive Magnetron Sputtering

Nickel oxide (NiO) thin films were successfully deposited on Corning 7059 glass substrates at different oxygen partial pressures in the range of 1 × 10 – 4 to 9 × 10 – 4 mbar using dc reactive magnetron sputtering technique. Structural properties of NiO films showed polycrystalline nature with cubic structure along (220) orientation. The optical transmittance and band gap values of the films increased with increasing the oxygen partial pressure from 1 × 10 – 4 to 5 × 10 – 4 mbar and decreased on further increasing the oxygen partial pressure. Using Scanning Electron Microscopy (SEM), fine grains were observed at oxygen partial pressure of 5 × 10 – 4 mbar. The film resistivity decreases from 90.48 to 13.24 Ω cm with increase in oxygen partial pressure to 5 × 10 – 4 mbar and then increased on further increasing the oxygen partial pressure. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3025