Add to ORKGThe characteristics of typical sub-100 nm high K gate dielectrics MOSFET with different gate materials are simulated by two dimensional device simulators (ATLAS and ATHENA). The impact of interface charges on the characteristics of Poly-Si and TiN metal gate MOSFETs are investigated. The simulation results shows that, at high interface charge densities, the devices with Poly-Si gate degrade much compared to metal gate MOSFET structures. Emphasis is given to study the mobility degradation which stands as a major hurdle with the implementation of high-k dielectrics in nano-scale devices. The advantages of using Watt model over other models for the extraction of channel mobility is also clearly explained. The performance of the high-k MOSFET w...
textChip density and performance improvements have been driven by aggressive scaling of semiconduc...
The potential impact of high-κ gate dielectrics on device short-channel performance is studied over ...
textIn order to provide better performance and higher packing density on the limited space, scaling...
The characteristics of typical sub-100 nm high K gate dielectrics MOSFET with different gate materia...
A comparison of the interfacial charges present in the high-k stacked gate dielectrics for Zr-doped ...
A comparison of the interfacial charges present in the high-k stacked gate dielectrics for Zr-doped ...
The continued efforts to improve performance and decrease size of semiconductor logic devices are fa...
This paper presents the electrical behaviour of Double Gate (DG) and Gate-All-Around nanowire (GAA) ...
The scaling of the gate length down in CMOS devices increases the drivecurrent performance and the d...
The success of the microelectronics industry over more then 30 years is to a large extent based on u...
The success of the microelectronics industry over more then 30 years is to a large extent based on u...
textThe performance scaling of metal-oxide-semiconductor field-effect-transistors (MOSFETs) has been...
The evaluation of the world’s first MOSFETs with epitaxially-grown rare-earth high-k gate dielectric...
Metallic impurity such as Hf and Ta could penetrate through dielectric layer resulting in degraded ...
textChip density and performance improvements have been driven by aggressive scaling of semiconduc...
textChip density and performance improvements have been driven by aggressive scaling of semiconduc...
The potential impact of high-κ gate dielectrics on device short-channel performance is studied over ...
textIn order to provide better performance and higher packing density on the limited space, scaling...
The characteristics of typical sub-100 nm high K gate dielectrics MOSFET with different gate materia...
A comparison of the interfacial charges present in the high-k stacked gate dielectrics for Zr-doped ...
A comparison of the interfacial charges present in the high-k stacked gate dielectrics for Zr-doped ...
The continued efforts to improve performance and decrease size of semiconductor logic devices are fa...
This paper presents the electrical behaviour of Double Gate (DG) and Gate-All-Around nanowire (GAA) ...
The scaling of the gate length down in CMOS devices increases the drivecurrent performance and the d...
The success of the microelectronics industry over more then 30 years is to a large extent based on u...
The success of the microelectronics industry over more then 30 years is to a large extent based on u...
textThe performance scaling of metal-oxide-semiconductor field-effect-transistors (MOSFETs) has been...
The evaluation of the world’s first MOSFETs with epitaxially-grown rare-earth high-k gate dielectric...
Metallic impurity such as Hf and Ta could penetrate through dielectric layer resulting in degraded ...
textChip density and performance improvements have been driven by aggressive scaling of semiconduc...
textChip density and performance improvements have been driven by aggressive scaling of semiconduc...
The potential impact of high-κ gate dielectrics on device short-channel performance is studied over ...
textIn order to provide better performance and higher packing density on the limited space, scaling...