Numerous experiments on defect formation in insulators, metals, alloys, and amorphous semiconductors have shown that these materials are sensitive to track formation when they are bombarded by swift heavy ions (SHI). Detail understanding of the basic processes of materials modification by SHI will help to construct materials with preassigned properties. Tracks were examined like a chain of deal spherical regions; it was assumed that each incident ion creates one such chain. In this model, we assume that the track is formed randomly, but in that place of the ion path, where the energy value, which loses each ion to the unity of the way, is above some threshold value. As a result of irradiation the number of tracks will continue to g...
Formation of the extensive structures from separate tracks depending on the characteristics of proje...
It is proposed that the “threshold for etchable track formation” in plastics is associated with the ...
We report on the observation of nanoscale density fluctuations in 2 mu m thick amorphous SiO2 layers...
Numerous experiments on defect formation in insulators, metals, alloys, and amorphous semiconductors...
As a result of irradiation with Xe with E = 250 MeV in InP at room temperature [1] defects, similar...
Radiation effects induced by heavy ions in many materials with diverse end points are well described...
Observations of GeV heavy ion and MeV cluster-ion tracks in crystalline solids give us new insight i...
The consequence of generation of dense electronic excitation along the paths of energetic heavy ions...
Ion-induced track data are analyzed without the application of any model for revealing the existing ...
AbstractThe consequence of generation of dense electronic excitation along the paths of energetic he...
Track radii R-e induced by swift heavy ions are studied. The experimental track data are analyzed in...
Detailed analysis of the morphology of latent tracks created by swift heavy ions from the surface en...
High-energy heavy ions deposit large amounts of energy in the electronic subsystem of target materia...
Thin metallic Pd films (100 Å) were submitted to irradiation with 100 KeV Xe ions. After an initial ...
Interaction between high energetic particles and matter typically leads to structural damage of...
Formation of the extensive structures from separate tracks depending on the characteristics of proje...
It is proposed that the “threshold for etchable track formation” in plastics is associated with the ...
We report on the observation of nanoscale density fluctuations in 2 mu m thick amorphous SiO2 layers...
Numerous experiments on defect formation in insulators, metals, alloys, and amorphous semiconductors...
As a result of irradiation with Xe with E = 250 MeV in InP at room temperature [1] defects, similar...
Radiation effects induced by heavy ions in many materials with diverse end points are well described...
Observations of GeV heavy ion and MeV cluster-ion tracks in crystalline solids give us new insight i...
The consequence of generation of dense electronic excitation along the paths of energetic heavy ions...
Ion-induced track data are analyzed without the application of any model for revealing the existing ...
AbstractThe consequence of generation of dense electronic excitation along the paths of energetic he...
Track radii R-e induced by swift heavy ions are studied. The experimental track data are analyzed in...
Detailed analysis of the morphology of latent tracks created by swift heavy ions from the surface en...
High-energy heavy ions deposit large amounts of energy in the electronic subsystem of target materia...
Thin metallic Pd films (100 Å) were submitted to irradiation with 100 KeV Xe ions. After an initial ...
Interaction between high energetic particles and matter typically leads to structural damage of...
Formation of the extensive structures from separate tracks depending on the characteristics of proje...
It is proposed that the “threshold for etchable track formation” in plastics is associated with the ...
We report on the observation of nanoscale density fluctuations in 2 mu m thick amorphous SiO2 layers...