FT Raman spectrum of ZnO nanowalls and nanorods showed optical phonon and multiphonon peaks of E2 (high) and E2 (low), E1 (TO and LO) and A1 (TO and LO), 2E2, [E2 + A1(LO)], [E1 (LO) + A1(TO)] and [E1(TO) + A(LO)] modes at (108.9 and 434.46 cm-1), (415.24 and 583.32), (383.49 and 574.84), 215.43, 676.24, 956.02 and 998.98 cm-1 respectively. In nanowalls, the appearance of B2 Raman inactive mode at 276.46 cm-1 is attributed to the existence of built in electric field in the crystallites of ZnO. The weak bands at 516.78 and 467.56 cm – 1 confirmed the presence of highly localized modes near the grain boundaries having electric field within the grains close to grain boundary The broadening and asymmetry of the first order E2 (high) optical p...
In this Letter, the Raman scattering and room-temperature photoluminescence (PL) spectra of the ZnO ...
High-density ZnO nanowires (ZnONWs) were aligned onto Au-catalyzed Si substrate through a simple low...
Zinc oxide (ZnO) is a II-VI semiconductor whose wide direct bandgap (3.37 eV) and large exciton bind...
FT Raman spectrum of ZnO nanowalls and nanorods showed optical phonon and multiphonon peaks of E2 (...
703-708The structure and morphology of ZnO nanorods and nanotubes synthesized by hydrothermal metho...
The impact of mixed defects on ZnO phononic and photonic properties at the nanoscale is only now bei...
We report on optical properties of ZnO nanorods grown on p-type Si substrates by an electric-field a...
Abstract Plenty of researches have been performed to probe the diverse properties of ZnO nanowires, ...
ZnO is an n-type semiconductor having a large band gap of 3.37eV. This study optimizes the fabricati...
We report on optical properties of ZnO nanorods grown on p-type Si substrates by an electric-field a...
The ability to understand the phonon behavior in small metal oxide nanostructures and their surfaces...
The authors report the observation of numerous (\u3e20)phonon replica peaks in the room temperature ...
ZnO thin films of porous structure with strong c-axis orientation were deposited on n-type silicon s...
We report Raman spectroscopy measurements on ZnO crystals grown by the vapor transport method and an...
Abstract In this work, we succeeded in preparing in-plane zinc oxide nanowires using a Ti-grid assis...
In this Letter, the Raman scattering and room-temperature photoluminescence (PL) spectra of the ZnO ...
High-density ZnO nanowires (ZnONWs) were aligned onto Au-catalyzed Si substrate through a simple low...
Zinc oxide (ZnO) is a II-VI semiconductor whose wide direct bandgap (3.37 eV) and large exciton bind...
FT Raman spectrum of ZnO nanowalls and nanorods showed optical phonon and multiphonon peaks of E2 (...
703-708The structure and morphology of ZnO nanorods and nanotubes synthesized by hydrothermal metho...
The impact of mixed defects on ZnO phononic and photonic properties at the nanoscale is only now bei...
We report on optical properties of ZnO nanorods grown on p-type Si substrates by an electric-field a...
Abstract Plenty of researches have been performed to probe the diverse properties of ZnO nanowires, ...
ZnO is an n-type semiconductor having a large band gap of 3.37eV. This study optimizes the fabricati...
We report on optical properties of ZnO nanorods grown on p-type Si substrates by an electric-field a...
The ability to understand the phonon behavior in small metal oxide nanostructures and their surfaces...
The authors report the observation of numerous (\u3e20)phonon replica peaks in the room temperature ...
ZnO thin films of porous structure with strong c-axis orientation were deposited on n-type silicon s...
We report Raman spectroscopy measurements on ZnO crystals grown by the vapor transport method and an...
Abstract In this work, we succeeded in preparing in-plane zinc oxide nanowires using a Ti-grid assis...
In this Letter, the Raman scattering and room-temperature photoluminescence (PL) spectra of the ZnO ...
High-density ZnO nanowires (ZnONWs) were aligned onto Au-catalyzed Si substrate through a simple low...
Zinc oxide (ZnO) is a II-VI semiconductor whose wide direct bandgap (3.37 eV) and large exciton bind...