For the first time the scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) are employed to investigate the morphology and the surface electronic structure of the defective silicon carbide nanowires (SiCNWs). The SiCNWs produced via combustion synthesis route are studied. The STS measurements are performed in the current imaging tunneling spectroscopy mode (CITS) that allows us to determine the correlation between STM topography and the local density of electronic states (LDOS) around the bend of an isolated SiCNW. The measurements reveal fluctuations of LDOS in the vicinity of the defect. The local graphitisation and the inhomogeneous concentration of doping impurities (e.g. nitrogen, oxygen) are considere...
We investigated the synthesis of SiC nanocrystals (NCs) of several nanometers on a crystalline Si(00...
We have used scanning tunneling microscopy (STM), Auger electron spectroscopy (AES) and X-ray Photoe...
We review the most recent advances into the knowledge and the understanding of cubic silicon carbide...
ABSTRACT: This paper reports quantitative mechanical characterization of silicon carbide (SiC) nanow...
This paper reports quantitative mechanical characterization of silicon carbide (SiC) nanowires (NWs)...
The atomic-level resolution of scanning transmission electron microscopy (TEM) is used for structura...
Using first-principles methods we performed a theoretical study of carbon clusters in silicon carbid...
Materials drastically alter their electronic properties when being reduced to the nanoscale due to q...
High power SiC MOSFET technologies are critical for energy saving in, e.g., distribution of electric...
Coordenação de Aperfeiçoamento de Pessoal de Nível SuperiorIn this work first we perform a study abo...
SiC nanowires (NWs) are commonly prepared in a Si-C-N system, but its formation mechanism is not ful...
Nanowires (NWs) open promising near-future perspectives for the design and fabrication of nano-scale...
Deep defects in silicon carbide (SiC) possess atom-like electronic, spin and optical properties, mak...
Silicon carbide (SiC) has recently been investigated as an alternative material to host deep optical...
Composite core-shell SiC-SiOx nanowires can be produced by heating quartz and SiC powders, with addi...
We investigated the synthesis of SiC nanocrystals (NCs) of several nanometers on a crystalline Si(00...
We have used scanning tunneling microscopy (STM), Auger electron spectroscopy (AES) and X-ray Photoe...
We review the most recent advances into the knowledge and the understanding of cubic silicon carbide...
ABSTRACT: This paper reports quantitative mechanical characterization of silicon carbide (SiC) nanow...
This paper reports quantitative mechanical characterization of silicon carbide (SiC) nanowires (NWs)...
The atomic-level resolution of scanning transmission electron microscopy (TEM) is used for structura...
Using first-principles methods we performed a theoretical study of carbon clusters in silicon carbid...
Materials drastically alter their electronic properties when being reduced to the nanoscale due to q...
High power SiC MOSFET technologies are critical for energy saving in, e.g., distribution of electric...
Coordenação de Aperfeiçoamento de Pessoal de Nível SuperiorIn this work first we perform a study abo...
SiC nanowires (NWs) are commonly prepared in a Si-C-N system, but its formation mechanism is not ful...
Nanowires (NWs) open promising near-future perspectives for the design and fabrication of nano-scale...
Deep defects in silicon carbide (SiC) possess atom-like electronic, spin and optical properties, mak...
Silicon carbide (SiC) has recently been investigated as an alternative material to host deep optical...
Composite core-shell SiC-SiOx nanowires can be produced by heating quartz and SiC powders, with addi...
We investigated the synthesis of SiC nanocrystals (NCs) of several nanometers on a crystalline Si(00...
We have used scanning tunneling microscopy (STM), Auger electron spectroscopy (AES) and X-ray Photoe...
We review the most recent advances into the knowledge and the understanding of cubic silicon carbide...